30BQ200 Datasheet, PDF (3/5 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – SCHOTTKY RECTIFIER

SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0026, Rev. -
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop*
Max. Reverse Current *
Max. Junction Capacitance
Max. Voltage Rate of
Change
* Pulse Width < 300µs, Duty Cycle < 2%
Symbol
V_F1
V_F2
I_R1
I_R2
C_T
dv/dt
Condition
@ 3 A, Pulse, T_J = 25 °C
@ 3 A, Pulse, T_J = 75 °C
@V_R = Rated V_R, Pulse,
T_J = 25 °C
@V_R = Rated V_R, Pulse,
T_J = 100 °C
@V_R = 5V, T_C = 25 °C
f_SIG = 1MHz
-
30BQ200
Green Products
Max.
0.92
0.76
1
3
60
10,000
Units
V
V
mA
mA
PF
V/μs
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Lead
Maximum Thermal
Resistance Junction to Case
Approximate Weight
Case Style
Symbol
T_J
T_stg
R_θJL
R_θJA
wt
Condition
-
-
DC operation
DC operation
-
SMC
Specification
-55 to +175
-55 to +175
12
Units
°C
°C
°C/W
46
°C/W
0.65
g
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