S1A-M Datasheet, PDF (2/4 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – Glass Passivated Die Construction

Technical Data
Data Sheet N0560, Rev. A
Marking Diagram:
S1A-M
Green Products
Where XXXXX is YYWWL
Cautions：Molding resin
Epoxy resin UL:94V-0
S1A
= Part Name
YY
= Year
WW
= Week
L
= Lot Number
Ordering Information
Device
S1A-S1M
Package
SMA
(Pb-Free)
Shipping
5000pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Characteristic
Symbol S1A S1B S1D S1G S1J S1K S1M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Maximum RMS voltage
Average forward rectified output current
@T_L = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
Forward Voltage
@I_F =1.0A
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 125°C
Reverse recovery time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
V_RRM
V_RWM 50
V_R
V_RMS 35
I_O
I_FSM
V_FM
I_RM
t_rr
C_J
R_THJL
T_J，T_STG
Note: 1. Reverse recovery condition IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3. Mounted on P.C. Board with 8.0mm² land area.
100 200 400 600 800 1000 V
70 140 280 420 560 700 V
1.0
A
30
1.10
5.0
200
2.5
15
30
-65 to +175
A
V
µA
µs
pF
°C/W
°C
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