63SPB080 Datasheet, PDF (2/4 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – Power Surface Mount Schottky Rectifier

SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1023, Rev. -
63SPB080/A
63SPB100/A
Green Products
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
Non-Repetitive Avalanche
Energy(per leg)
Repetitive Avalanche
Current(per leg)
Symbol
Condition
V_RWM
-
80
100
I_F(AV)
50% duty cycle, rectangular
wave form
Max.
(63SPB080/A)
(63SPB100/A)
60
I_FSM 8.3 ms, half Sine pulse
E_AS
T_J=25℃,I_AS=0.75A,
L=40 mH
I_AS decaying linearly to 0 in
I_AR
1 μsec Frequency limited
by T_J max. V_A=1.5×V_R
860
11.25
0.75
Units
V
A
A
mJ
A
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop*
Max. Reverse Current (per
leg) *
Max. Junction Capacitance
(per leg)
Max. Voltage Rated of
Change
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
V_F1
V_F2
I_R1
I_R2
C_J
dv/dt
Condition
@ 60A, Pulse, T_J = 25 °C
@ 60A, Pulse, T_J = 125 °C
@V_R = rated VR
T_J = 25 °C
@V_R = rated VR
T_J = 125 °C
@V_R = 5V, T_C = 25 °C
f_SIG = 1MHz
-
Max.
0.87
0.72
1.0
24.0
1500
10,000
Units
V
V
mA
mA
pF
V/μs
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Case Style
Symbol
T_J
T_stg
R_θJC
Condition
-
-
DC operation
SPD-2/A
Specification
-55 to +175
-55 to +175
0.37
Units
°C
°C
°C/W
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