403DMQ600 Datasheet, PDF (2/3 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – Guard ring for enhanced ruggedness and long term reliability

SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1685, Rev. -
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Forward Current
Peak One Cycle Non-
Repetitive Surge Current
Symbol
V_RWM
I_F(AV)
I_FSM
Condition
-
50% duty cycle @T_C =117°C,
rectangular wave form
8.3 ms, half Sine pulse
403DMQ600
Green Products
Max.
600
200(per leg)
400(per device)
1600
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop
Reverse Current
Reverse Recovery Time
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
V_F1
I_R1
t_rr
Condition
@ 200A, Pulse, T_J = 25 °C
@V_R = rated VR T_J = 25 °C
I_F=500mA, I_R=1A,and
I_rm=250mA
Typ.
1.68
0.175
-
Max.
1.85
100
90
Units
V
μA
ns
Thermal-Mechanical Specifications:
Characteristics
Symbol
Junction Temperature
T_J
Storage Temperature
T_stg
Maximum Thermal
R_θJC
Resistance Junction to Case
(per leg)
Maximum Thermal
R_θJC
Resistance Junction to Case
(per package)
Maximum Thermal
Resistance, Case to Heat
R_θCS
Sink
Approximate Weight
wt
Mounting Torque
T_M
Case Style
Condition
-
-
DC operation
Specification
-55 to +175
-55 to +175
0.50
DC operation
0.25
Mounting surface, smooth and
0.10
greased
-
79
Non-Iubricatedthreads
Mounting 24 (min)
Torque 35 (max)
Terminal 35(min)
Torque 46 (max)
PRM4 Isolated
Units
°C
°C
°C/W
°C/W
°C/W
g
Kg-cm
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