403CNQ600-1 Datasheet, PDF (2/3 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – Guard ring for enhanced ruggedness and long term reliability

Technical Data
Data Sheet N1810, Rev. -
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Forward Current
Peak One Cycle Non-Repetitive
Surge Current
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
I_FSM
Condition
-
50% duty cycle @T_C =125°C,
rectangular wave form
8.3 ms, half Sine pulse
403CNQ600-1
Green Products
Max.
600
400
2700
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current*
Reverse Recovery Time
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
V_F1
I_R1
I_R2
t_rr
Condition
@ 200A, Pulse, T_J = 25 °C
@V_R = rated VR T_J = 25 °C
@V_R = rated VR T_J = 125 °C
IF=500mA, IR=1A,and
Irm=250mA
Max.
1.5
20
3
120
Units
V
μA
mA
ns
Thermal-Mechanical Specifications:
Characteristics
Symbol
Junction Temperature
T_J
Storage Temperature
T_stg
Typical Thermal Resistance
R_θJC
Junction to Case(per diodes)
Approximate Weight
wt
Mounting torque
T_M
Mounting torque
Terminal torque
Case Style
Condition
-
-
DC operation
Specification
-55 to +175
-55 to +175
0.14
-
-
PRM4-1(Non-Isolated)
80
30(3.4)
18(2.1)
30(3.4)
Units
°C
°C
°C/W
g
Lbf.in
(N.M)
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