1N3889 Datasheet, PDF (1/3 Pages) Microsemi Corporation – Fast Recovery Rectifier

Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types up to 400 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N3889 thru 1N3893R
V_RRM = 50 V - 400 V
I_F = 12 A
DO-4 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) 1N3893 (R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
V_RRM
V_RMS
V_DC
I_F
T_C ≤ 100 °C
50
100
200
300
400
V
35
70
140
280
420
V
50
100
200
400
600
V
12
12
12
12
12
A
Surge non-repetitive forward
current, Half Sine Wave
I_F,SM T_C = 25 °C, t_p = 8.3 ms
90
90
90
90
90
A
Operating temperature
T_j
Storage temperature
T_stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) 1N3893 (R) Unit
Diode forward voltage
Reverse current
V_F
I_F = 12 A, T_j = 25 °C
1.4
1.4
1.4
1.4
1.4
V
I_R
V_R = 50 V, T_j = 25 °C
V_R = 50 V, T_j = 150 °C
25
6
25
6
25
6
25
25
μA
6
6
mA
Recovery Time
Maximum reverse recovery
time
T_RR
I_F=0.5 A, I_R=1.0 A,
I_RR= 0.25 A
200
200
200
200
200
nS
Thermal characteristics
Thermal resistance, junction
- case
R_thJC
2.0
2.0
2.0
2.0
2.0 °C/W
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