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1N2133A Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – Silicon Standard Recovery Diode
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 300 V to 600 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N2133A thru 1N2138AR
VRRM = 300 V - 600 V
IF =60 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N2133A(R) 1N2135A(R) 1N2137A(R) 1N2138A(R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
VRRM
VRMS
VDC
IF
IF,SM
TC ≤ 150 °C
TC = 25 °C, tp = 8.3 ms
300
210
50
60
1050
400
280
100
60
1050
500
600
V
350
420
V
150
200
V
60
60
A
1050
1050
A
Operating temperature
Tj
Storage temperature
Tstg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N2133A(R) 1N2135A(R) 1N2137A(R) 1N2138A(R) Unit
Diode forward voltage
VF
IF = 60 A, Tj = 25 °C
1.1
1.1
1.1
1.1
V
Reverse current
IR
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 150 °C
10
15
10
15
10
10
μA
15
15
mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
0.65
0.65
0.65
0.65
°C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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