GMV7811 Datasheet, PDF (1/3 Pages) Skyworks Solutions Inc. – GaAs Hyperabrupt Junction Varactor Diodes

GaAs Hyperabrupt Junction
Varactor Diodes
Features
■ Constant Gamma of 1.0 and 1.25
■ Highly Linear Frequency Tuning
■ Constant Modulation Sensitivity
■ Lower Series Resistance and Higher Q in
Comparison to Equivalent Silicon
Hyperabrupt Varactors
Description
This series of GaAs hyperabrupt varactor diodes features
a constant gamma of 1.0 and 1.25, which allows for a
relatively linear frequency tuning for VCOs, modulators and
tunable filters. Varactors in this series are grown by MBE
(Molecular Beam Epitaxy), which allows monolayer
control of the doping profile.This translates to superb wafer-
to-wafer uniformity. The series resistance is lower, and Q
is higher when compared to an equivalent silicon
hyperabrupt varactor. These diodes are suited for
applications at X band frequencies and above, where wide
change in frequency is desired. However, in certain
applications the GaAs hyperabrupt varactor exhibits a
higher surface noise in comparison to an equivalent silicon
varactor.
Absolute Maximum Ratings
Characteristic
Reverse Voltage (V_R)
Forward Current (I_F)
Power Dissipation at 25°C
Operating Temperature (T_OP)
Storage Temperature (T_ST)
Value
18 V
100 mA
250 mW
-55°C to +150°C
-65°C to +200°C
GMV7811, GMV7821
GMV9801, GMV9821, GMV9822
Flip Chip
Chip
Outline Drawings
540-011
0.026 (0.66 mm)
± 0.001 (0.025 mm)
0.013 (0.33 mm)
± 0.001 (0.025 mm)
0.008 (0.20 mm)
± 0.001 (0.025 mm)
0.005 (0.13 mm)
± 0.001 (0.025 mm)
0.013 (0.33 mm)
± 0.001 (0.025 mm)
150-808
METALLIZED GOLD DOT
0.0011 (0.0279 mm)
MIN. DIA.
0.010 (0.25 mm)
± 0.001 (0.025 mm)
0.004 (0.10 mm)
± 0.001 (0.025 mm)
MAX.
0.010 (0.25 mm)
± 0.001 (0.025 mm)
METALLIZED BACK
CONTACT GOLD
0.005 (0.13 mm) NOM.
Skyworks Solutions, Inc. [781] 376-3000 • Fax [781] 376-3100 • Email [e-mail] • www.skyworksinc.com
1
Specifications subject to change without notice. 5/03A