AFM06P2-212 Datasheet, PDF (1/2 Pages) Skyworks Solutions Inc. – Ka Band Power GaAs MESFET

Ka Band Power GaAs MESFET
Features
s 22 dBm Output Power at 18 GHz
s High Associated Gain, 9 dB at 18 GHz
s High Power Added Efficiency, 23%
s Broadband Operation, DC–18 GHz
s 0.25 µm Ti/Pd/Au
s Passivated Surface
AFM06P2-212, 213
213
Drain
Source
Drain
Source
Gate
Source
Source
Gate
212
Description
The AFM06P2-212, 213 is a high performance power
GaAs MESFET chip in an industry standard ceramic
micro-x package, having a gate length of 0.25 µm and a
total gate periphery of 600 µm. The device has excellent
gain and power performance through 26 GHz making it
suitable for a wide range of commercial and military
applications in oscillator and amplifier circuits. The device
employs Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged reliable part.
Absolute Maximum Ratings
Parameter
Drain to Source Voltage (V_DS)
Gate to Source Voltage (V_GS)
Drain Current (I_DS)
Gate Current (I_GS)
Total Power Dissipation (P_T)
Channel Temperature (T_CH)
Storage Temperature (T_ST)
Value
6V
–4 V
I_DSS
1 mA
1.1 W
175°C
–65 to +150°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current
Transconductance
Pinch–Off Voltage
Gate to Drain Breakdown Voltage
Output Power at 1dB Compression
Gain at 1dB Compression
Power Added Efficiency
Symbol
I_DSS
gm
V_P
V_BGD
P _{1 dB}
G _{1 dB}
ηadd
Test Conditions
V_DS = 2 V, V_GS = 0 V
V_DS = 5 V, I_DS = 1.5 mA
I_GD = 600 µA
V_DS = 5 V, I_DS = 70 mA, F = 18 GHz
Min.
130
90
1
8
–
–
–
Typ.
200
120
3
12
22
9
23
Max.
270
–
5
–
–
–
–
Unit
mA
mS
V
V
dBm
dB
%
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com
1
Specifications subject to change without notice. 2/99A