MMBF170 Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

N-Channel Enhancement Mode MOSFET
Features
 Surface-mounted package
 Advanced trench cell design
 Extremely low threshold voltage
 ESD protected ( HBM > 2KV )
Quick reference
 BV ≧ 60 V
 Ptot ≦ 0.83 W
 ID ≦ 0.5 A
 RDS(ON) ≦ 3 Ω @ VGS = 10 V
 RDS(ON) ≦ 4 Ω @ VGS = 4.5 V
Limiting Values
SOT-23
Top View
1 :Gate(G) 2 :Source(S) 3 :Drain(D)
Notes：* Surface Mounted on 1 in2 pad area, t ≤ 10 sec
** Pulse width ≤ 300 μs, duty cycle ≤ 2 %
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