DMN3052L Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

N-Channel Enhancement Mode MOSFET
Feature
●30V/5.2A, RDS(ON) = 35mΩ(MAX) @VGS = 10V.
RDS(ON) =40mΩ(MAX) @VGS = 4.5V.
RDS(ON) =55mΩ(MAX) @VGS = 2.5V.
●Super High dense cell design for extremely low RDS(ON) .
●Reliable and Rugged.
●SOT-23 for Surface Mount Package.
Applications
● Power Management
●Portable Equipment and Battery Powered Systems.
Absolute Maximum Ratings TA=25℃ Unless Otherwise noted
Electrical Characteristics TA=25℃ Unless Otherwise noted
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