XD010-42S-D4F Datasheet, PDF (1/5 Pages) SIRENZA MICRODEVICES – 869-894 MHz Class A 8 W Power Amplifier Module

Product Description
Sirenza Microdevices’ XD010-42S-D4F 8W power module is a robust 2-
stage Class A amplifier module for use in the driver stages of linear RF
power amplifiers of cellular base stations. The power transistors are fabri-
cated using Sirenza's latest, high performance LDMOS process. This unit
operates from a single voltage and has internal temperature compensation
of the bias voltage to ensure stable performance over the full temperature
range. It is internally matched to 50 ohms.
XD010-42S-D4F
869-894 MHz Class A
8 W Power Amplifier Module
Functional Block Diagram
Stage 1
Stage 2
Bias
Network
1
2
RF in
VD1
Temperature
Compensation
3
4
VD2
RF out
Product Features
• 50 W RF impedance
• 8W Output P1dB Typical
• Single Supply Operation : Nominally 28V
• High Gain: 30 dB at 880 MHz
• Advanced, XeMOS II LDMOS FETS
• Temperature Compensation
Applications
• Base Station PA driver
• Repeater
• CDMA
• GSM / EDGE
Case Flange = Ground
Key Specifications
Symbol
Parameter
Unit
Frequency
Frequency of Operation
MHz
P_1dB
Output Power at 1dB Compression, 880 MHz
W
Gain
Gain at 1W Output Power (CW)
dB
Gain Flatness
Over Frequency at 1W Output (CW)
dB
IRL
Input Return Loss at 1W Output (CW) (50Ω Ref)
dB
Efficiency
Drain Efficiency at 8W CW Output
%
Drain Efficiency at 1W CDMA (Single Carrier IS-95)
%
ACPR at 1W CDMA Output (Single Carrier IS-95, 9 Ch Fwd,
Offset=750KHz, ACPR Integrated Bandwidth)
dB
Linearity
ALT-1 at 1W CDMA (Single Carrier IS-95, 9 Ch Fwd,
Offset=1980KHz, ACPR Integrated Bandwidth)
dB
3rd Order IMD at 8W PEP (Two Tone 1MHz Spacing)
dB
3rd Order IMD at 1W PEP (Two Tone 1MHz Spacing)
dBc
Delay
Signal Delay from Pin 1 to Pin 4
nS
Phase Linearity
Deviation from Linear Phase (Peak to Peak)
Deg
R_{TH, j-l}
Thermal Resistance Stage 1 (Junction to Case)
ºC/W
Tes^RtTCH,oj-n2ditions: Z_in = Z_o^T_u^h_t ^e=^rm50^aΩ^{l R}, V^e_D^si_D^st=^an2^c8^e.0^SV^t,^aI^g_D^e_Q²₁ =^(J2^u3ⁿ0^ctm^ioAⁿ,^toI^C_DQ^a₂^se=⁾ 700mA, T_Flange = 2^ºC5º^/WC
Min.
869
7
28
14
22
-28
-40
Typ.
8
30
0.4
20
24
3.5
-50
-75
-32
-50
3.9
0.5
11
4
Max.
894
1
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-102938 Rev C