XD010-04S-D4F Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – 350-600 MHz Class AB 10W Power Amplifier Module

Product Description
Sirenza Microdevices’ XD010-04S-D4F 12W power module is a robust
broadband 2-stage Class A/AB amplifier, suitable for use as a power ampli-
fier driver or output stage. The power transistors are fabricated using
Sirenza's latest, high performance LDMOS process. It is a drop-in, no-
tune, solution for high power applications requiring high efficiency, excel-
lent linearity, and unit-to-unit repeatability. Internal bias current compensa-
tion ensures stable performance over a wide temperature range. It is
internally matched to 50 ohms.
XD010-04S-D4F
XD010-04S-D4FY ^{Pb RoHS Compliant}
& Green Package
350-600 MHz Class AB
12W Power Amplifier Module
Functional Block Diagram
Stage 1
Stage 2
Bias
Network
1
2
Temperature
Compensation
3
4
Product Features
• Available in RoHS compliant packaging
• 50 W RF impedance
• 12W Output P_1dB
• Single Supply Operation : Nominally 28V
• High Gain: 32 dB at 450 MHz
• High Efficiency: 30% at 450 MHz
• Robust 8000V ESD (HBM), Class 3B
• XeMOS II LDMOS FETS
• Temperature Compensation
RF in
VD1
VD2
Case Flange = Ground
RF out
Key Specifications
Applications
• DTV
• Public Service
• Wireless Infrastructure
• Military Communications
Symbol
Parameter
Unit
Min.
Typ.
Frequency
Frequency of Operation
MHz
350
-
P_1dB
Gain
Output Power at 1dB Compression, 450MHz
Gain at 10W Output Power, 450MHz
W
-
12
dB
30
32
Gain Flatness
Peak to Peak Gain Variation, 350 - 600MHz
dB
-
1.0
IRL
Input Return Loss 1W Output Power, 350 - 600MHz
dB
10
15
Efficiency
Linearity
Drain Efficiency at 10W CW, 350-600MHz
%
26
30
3^rd Order IMD at 10W PEP (Two Tone), 450MHz & 451MHz
dBc
-
-32
Delay
Signal Delay from Pin 1 to Pin 4
nS
-
2.5
Phase Linearity
Deviation from Linear Phase (Peak to Peak)
Deg
-
0.5
Frequency
Frequency of Operation
MHz
350
-
R_{TH, j-l}
Thermal Resistance Stage 1 (Junction-to-Case)
ºC/W
11
R_{TH, j-2}
Thermal Resistance Stage 2 (Junction-to-Case)
ºC/W
4
Test Conditions Z_in = Z_out = 50Ω, V_DD = 28.0V, I_DQ1 = 230 mA, I_DQ2 =150 mA, T_Flange = 25ºC
Max.
600
-
-
2.0
-
-
-28
-
-
600
1625-1675The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and
all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-104259 Rev E