SZM-2066Z Datasheet, PDF (1/13 Pages) SIRENZA MICRODEVICES – 2.4-2.7GHz 2W Power Amplifier

Product Description
Sirenza Microdevices’ SZM-2066Z is a high linearity class AB
Heterojunction Bipolar Transistor (HBT) amplifier housed in a
low-cost surface-mountable plastic Q-FlexN multi-chip module
package. This HBT amplifier is made with InGaP on GaAs
device technology and fabricated with MOCVD for an ideal
combination of low cost and high reliability.
Preliminary
SZM-2066Z
2.4-2.7GHz 2W Power Amplifier
Pb RoHS Compliant
& Green Package
This product is specifically designed as a final or driver stage
for 802.16 and 802.11b/g equipment in the 2.4-2.7 GHz
bands. It can run from a 3V to 5V supply. The external output
match and bias adjustability allows load line optimization for
other applications or over narrower bands. It features an out-
put power detector, on/off power control and high RF overdrive
robustness. This product features a RoHS compliant and
Green package with matte tin finish, designated by the ‘Z’ suf-
fix.
Functional Block Diagram
Vcc = 5V
RFIN
Vbias = 5V
Stage 1
Bias
Pow er
Up/Dow n
Control
Stage 2
Bias
Stage 3
Bias
Pow er
Detector
RFOUT
6mm x 6mm QFN Package
Product Features
• P1dB = 33.5dBm @ 5V
• Three Stages of Gain: 37dB
• 802.11g 54Mb/s Class AB Performance
• Pout = 26dBm @ 2.5% EVM, Vcc 5V, 690mA
• Active Bias with Adjustable Current
• On-chip Output Power Detector
• Low Thermal Resistance
• Power up/down control < 1μs
Applications
• 802.16 WiMAX Driver or Output Stage
• 802.11b/g WLAN, WiFi
Key Specifications
Symbol
Parameters: Test Conditions, 2.5-2.7GHz App circuit,
Z₀ = 50Ω, V_CC = 5.0V, Iq = 583mA, T_BP = 30ºC
f_O
Frequency of Operation
P_1dB
Output Power at 1dB Compression – 2.7GHz
S₂₁
Small Signal Gain – 2.7GHz
Pout
Output power at 2.5% EVM 802.11g 54Mb/s - 2.7GHz
IM3
Third Order Suppression (Pout=23dBm per tone) - 2.7GHz
NF
Noise Figure at 2.7 GHz
IRL
Worst Case Input Return Loss 2.5-2.7GHz
ORL
Worst Case Output Return Loss 2.5-2.7GHz
Vdet Range Output Voltage Range for Pout=10dBm to 33dBm
I_cq
I_VPC
I_leak
R_{th, j-l}
Quiescent Current (V_cc = 5V)
Power Up Control Current (V_pc=5V, ( I_VPC1 +I_VPC2+ I_VPC3 )
Vcc Leakage Current (V_cc = 5V, V_pc = 0V)
Thermal Resistance (junction - lead)
Unit
MHz
dBm
dB
dBm
dBc
dB
dB
V
mA
mA
µA
ºC/W
Min.
2500
32.0
32.2
7.5
12.5
503
Typ.
33.5
33.7
26.0
-45
7.7
10.5
15.5
0.9 to 1.8
583
4
10
Max.
2700
-40
663
50
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
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EDS-104641 Rev C