SRM-2016 Datasheet, PDF (1/9 Pages) Stanford Microdevices – 1700 - 2000 MHz High Linearity Silicon Germanium Active Receive Mixer

Product Description
The Sirenza Microdevices’ SRM-2016 is a high linearity
active mixer for use in a wide variety of communication
systems covering the 1700-2300 MHz frequency bands.
This device operates from a single 5V supply and provides
12 dB of conversion gain while requiring only 0dBm input
to the integrated LO driver. The SRM-2016 also includes
an integrated on chip IF amplifier and is fabricated using
Silicon Germanium (SiGe) device technology.
The RF and LO ports can be driven differential or single
ended. Each broadband port has been designed to mini-
mize performance degradation while operating into highly
reactive components such as SAW filters. The device is
packaged in an industry standard 16 pin TSSOP with
exposed paddle for superb RF and thermal ground.
Functional Block Diagram
IFP 1
VCC 2
VEE 3
RFP 4
RFN 5
VEE 6
VCC 7
L1 8
16 IFN
15 VCC
14 VEE
13 LOP
12 LON
11 VEE
10 VCC
9 L2
SRM-2016
1700 - 2300 MHz High Linearity
Active Receive Mixer
16 pin TSSOP with Exposed Ground Pad
Package Footprint: 0.197 x 0.252 inches (5.0 x 6.4 mm)
Package Height: 0.039 inches (1.0 mm)
Product Features
• Active mixer with 12dB conversion gain
• Integrated 0dBm LO drive and IF amplifier
• Differential or single-ended input
• Single supply operation (+5V)
• Broadband resistive 50Ω impedance on all
three ports
Applications
• 1700-2300 MHz receivers
Product Specifications
Parameters
Test Conditions: T_A = 25ºC, V_CC = 5.0V,
P_LO = 0dBm, P_RF = -20dBm, IF = 200MHz
RF Frequency Range
For RF = 2000-2300 MHz operation, single-
ended RF+LO drive is recommended.
Unit Min. Typ. Max. Min. Typ. Max.
MHz 1700
2000 2000
2300
LO Frequency Range
MHz 1400
2000 1700
2300
IF Frequency Range
MHz
30
200 300
30
200 300
Conversion Gain
dB
9
12
15
6
9
12
SSB Noise Figure
dB
14
17
16
19
Input IP3
RF1 = RF2 = -15 dBm/tone, 1 MHz spacing
dBm
12
15
12
16
Input P1dB
dBm
1
2
3
5
Leakage (LO-RF)
dBm
-60
-40
-30
-20
Leakage (LO-IF)
dBm
-30
-20
-30
-20
Leakage (RF-IF)
dBm
-53
-40
-35
-25
RF, LO, IF Return Loss Matched to 50Ω, see Note 1, pages 3 & 5
dB
20
20
Supply Voltage (Vcc)
V +4.75 +5.0 +5.25 +4.75 +5.0 +5.25
Supply Current
mA
160 180
160 180
LO Drive
Matched to 50Ω
dBm
-3
0
+3
-3
0
+3
Thermal Resistance
junction-case
ºC/W
46
46
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
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EDS-102101 Rev D