SPF-3143 Datasheet, PDF (1/3 Pages) SIRENZA MICRODEVICES – Low Noise pHEMT GaAs FET

Product Description
Sirenza Microdevices’ SPF-3143 is a high performance
0.5µm pHEMT Gallium Arsenide FET. This 600µm device is
ideally biased at 3V,20mA for lowest noise performance and
battery powered requirements. At 5V,40mA the device can
deliver OIP3 of 31dBm. It provides ideal performance as a
driver stage in many commercial and industrial LNA
applications.
40
35
30
25
20
15
10
5
0
0
Typical Gain Performance
5V 40mA
3V 20mA
Gain
Gmax
2
4
6
8
10
Frequency (GHz)
PPrerleilmimininaaryry
SPF-3143
Low Noise pHEMT GaAs FET
Product Features
• DC-10 GHz Operation
• 0.58 dB NF_MIN @ 2 GHz
• 21 dB G_MAX @ 2 GHz
• +31 dBm OIP3 (5V,40mA)
• +18 dBm P1dB (5V,40mA)
• Low Current, Low Cost
• Apps circuits available for key bands
Applications
• Analog and Digital Wireless Systems
• 3G, Cellular, PCS
• Fixed Wireless, Pager Systems
• Driver Stage for Low Power Applications
Symbol Device Characteristics
Test Condition
V_DS=5V, I_DQ=40mA, 25C
(unless otherwise noted)
Test
Frequency
Units
Min
Typ
Max
G_MAX
NF_MIN
S₂₁
NF
Maximum Available Gain
Minimum Noise Figure
Insertion Gain
Noise Figure
Z_S=Z_S*, Z_L = Z_L*
Z_S=Γ_OPT, Z_L = Z_L*
0.9GHz
1.9GHz
dB
0.9GHz
1.9GHz
dB
Z_S=Z_L=50Ω
0.9GHz
dB
LNA Application Circuit Board
1.9GHz
dB
23.3
19.9
0.36
0.58
20.1
0.9
Gain
Gain
LNA Application Circuit Board
1.9GHz
dB
15.1
OIP₃
P_1dB
V_P
I_DSS
g_m
BV_GSO
BV_GDO
Rth
Output 3rd Order Intercept Point LNA Application Circuit Board
1.9GHz dBm
31.0
Output 1dB Compression Point LNA Application Circuit Board
1.9GHz dBm
17.7
Pinchoff Voltage
Saturated Drain Current
Transconductance
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance
V_DS=2V, I_DS=0.1mA
V_DS=2V, V_GS=0V
V_DS=2V, V_GS=-0.3V
I_GS=300uA, drain open
I_GD=300uA, source open
junction to lead
V
-1.4
-1.0
-0.6
mA
180
mS
210
V
-10
-7
V
-12
-10
C/W
200
V_DS
Operating Voltage
I_DS
Operating Current
drain-s ource
drain-s ource
V
5.5
mA
55
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-103162 Rev B