SPF-2086TK Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – Low Noise pHEMT GaAs FET

Product Description
Sirenza Microdevices’ SPF-2086TK is a high performance
0.25µm pHEMT Gallium Arsenide FET with Schottky barrier
gates. This 300µm device is ideally biased at 3V,20mA for lowest
noise performance and battery powered requirements. At
5V,40mA the device delivers excellent output TOI of 32 dBm.
It provides ideal performance as driver stages in many
commercial, industrial and military LNA applications.
SPF-2086TK
Low Noise pHEMT GaAs FET
0.1 - 6 GHz Operation
Typical Gain Performance
35
Product Features
• 22 dB Gmax at 1.9 GHz
30
3v, 20mA
5v, 40mA
25
• 0.4 dB F_MIN at 1.9 GHz
• +32 dBm Output IP3
20
• +20 dBm Output Power at 1dB Compression
15
Gmax
10
Applications
5
Gain
• LNA for Analog and Digital Wireless Systems
0
• 3G, Cellular, PCS
0
2
4
6
8
10
12
• Fixed Wireless, Pager Systems
Frequency (GHz)
• Driver Stage for low power applications
Symbol
Gmax
S₂₁
F_MIN
OIP3
P1dB
I_DSS
g_m
V_P
BV_GS
BV_GD
Rth
Device Characteristics, T = 25°C
V_DS=3V, I_DQ=20mA (unless otherwise noted)
Maximum Available Gain
Z_S=Z_S*, Z_L=Z_L*
Insertion Gain
Z_S=Z_L= 50 Ohms
Minimum Noise Figure
Z_S=Γ_OPT , Z_L=Z_LOPT
Output Third Order Intercept Point
Z_S=Z_SOPT , Z_L=Z_LOPT
Output 1dB Compression Point
Z_S=Z_SOPT, Z_L=Z_LOPT
Saturated Drain Current
V_DS = V_DSP, V_GS= 0V
Tranconductance:
V_DS = V_DSP, V_GS= -0.25V
Pinch-Off Voltage:
V_DS = 2.0V, I_DS = 150µA
Gate-to-Source Breakdown Voltage
I_GS = 0.3mA, drain open
Gate-to-Drain Breakdown Voltage
I_GD = 0.3mA, V_GS = -3.0V
Thermal Resistance, junction-to-lead
Test Condition
[1] = 100% Tested
f = 0.9 GHz
f = 1.9 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 1.9 GHz [1]
f = 1 GHz
f = 2 GHz
f = 4 GHz
f = 6 GHz
V_DS=5.0V, I_DQ=40mA
V_DS=3.0V, I_DQ=20mA
V_DS=5.0V, I_DQ=40mA
V_DS=3.0V, I_DQ=20mA
[1]
[1]
[1]
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
mA
mS
V
V
V
o_C/W
Min.
-
-
-
-
16.0
-
-
-
-
-
-
-
-
30
-
-1.5
-
-
-
Typ.
25.2
21.8
18.7
13.5
17.7
0.3
0.4
0.5
0.7
32
28
20
15
85
112
-1.0
-17
-17
110
Max.
-
-
-
-
19.4
-
-
-
-
-
-
-
-
140
-
-0.5
-8
-8
-
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza
Microdevices product for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-101225 Rev. D