SPF-2000 Datasheet, PDF (1/3 Pages) SIRENZA MICRODEVICES – Low Noise High Linearity pHEMT GaAs FET 0.1 - 12 GHz Operation

Product Description
Sirenza Microdevices’ SPF-2000 is a high linearity, low noise
0.25µm pHEMT. This 300µm device is ideally biased at 3V,20mA
for lowest noise performance. At 5V,40mA the device delivers
excellent output TOI of 32 dBm. It provides ideal performance
as driver stages in many commercial, industrial and military
LNA applications.
SPF-2000
Preliminary
Low Noise High Linearity
pHEMT GaAs FET
0.1 - 12 GHz Operation
Typical Gain Performance
30
25
3V, 20mA
5V, 40mA
Product Features
• 15 dB Gmax at 12GHz
• 1.25 dB F_MIN at 12 GHz
• +32 dBm Output IP3 at 12GHz
20
• +20 dBm Output Power at 1dB Compression
Gmax
15
10
Gain
5
Applications
• High IP3 LNA for VSAT, LMDS, Cellular Systems
and Instrumentation
0
• Broadband Amplifiers
0
5
10
15
20
25
30
Frequency (GHz)
S ym bol
Gm ax
S ₂₁
N F _{M IN}
P _1dB
G _1dB
O IP ₃
I_{D S S}
V_P
G_M
B V _GS
B V _GD
R _TH
V _DS
I_{D Q}
P _{D IS S}
D e v ic e C h a ra c te ris tic s :
M a xi m u m A va i la b le G a i n ^{[2 ]}
In s e r ti o n G a i n ^{[2 ]}
M inim um N oise F igure
O utp ut 1 d B C o m p re s s io n P o int
G a in a t 1 d B C o m p re ssio n P o int
O u tp u t T h i rd O rd e r In te rc e p t P o i n t
S a tura te d D ra in C urre nt ^[2]
P in c h o ff V o lta g e ^{[1 ]}
Tra ns c o nd uc ta nc e
G a te to S o urc e B re a k d o w n V o lta g e ^[1]
G a te to D ra in B re a k d o w n V o lta g e ^[1]
The rm a l R e s is ta nc e
O p e ra ting V o lta g e ^[3]
O p e ra ting C u rre nt ^[3]
P o w e r D is s ip a tio n ^[3]
Te s t C o n d itio n s ,
V d s = 3 V , Id s = 2 0 m A , T = 2 5 °C
(u n le s s o th e rw is e n o te d )
Z_S = Z_S*, Z_L = Z_L*
Z_S = Z_L = 5 0 O hm s
Z _S = G a m m a -o p t, Z _L = Z _L*
V _DS = 5V,
V _DS = 3V,
V _DS = 5V,
V _DS = 3V,
I_{D S} = 4 0 m A
I_{D S} = 2 0 m A
I_{D S} = 4 0 m A
I_{D S} = 2 0 m A
V _DS = 5V,
V _DS = 3V,
V _DS = 5V,
V _DS = 3V,
I_{D S} = 4 0 m A
I_{D S} = 2 0 m A
I_{D S} = 4 0 m A
I_{D S} = 2 0 m A
V _DS = 5V,
V _DS = 3V,
V _DS = 5V,
V _DS = 3V,
I_{D S} = 4 0 m A
I_{D S} = 2 0 m A
I_{D S} = 4 0 m A
I_{D S} = 2 0 m A
Test
Frequ en cy
1 .9 G H z
4 .0 G H z
1 2 .0 G H z
1 .9 G H z
2 .0 G H z
4 .0 G H z
1 2 .0 G H z
2 .0 G H z
2 .0 G H z
1 2 .0 G H z
1 2 .0 G H z
2 .0 G H z
2 .0 G H z
1 2 .0 G H z
1 2 .0 G H z
2 .0 G H z
2 .0 G H z
1 2 .0 G H z
1 2 .0 G H z
V _{D S} = 2 V , I_{D S} = 0 .1 5 0 m A
V _{G S} = -0 .2 5 V
I_{G S} = 0 .3 m A , d ra i n o p e n
I_{G D} = 0 .3 m A , V _{G S} = - 3 .0 V
D ra in-so urce
D ra in-so urce , q uie sce nt
U n its M in . Ty p . M a x .
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
mA
V
mS
V
V
C /W
V
mA
W
-
21
13
16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30
-1 .5
-
-
-
25
23
15
18
0 .5
0 .6
1 .2
2 0 .0
1 5 .0
21
18
1 7 .7
1 7 .0
1 3 .0
11 .0
32
28
32
30
85
-1 .0
11 2
-1 7
-1 7
11 0
-
25
17
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
140
-0 .5
-
-8
-8
5 .5
55
0 .2
[1] 100% tested - DC parameters tested on wafer.
[2] Sample tested - Samples pullled from each wafer lot. Sample test specifications are based on statistical data from sample test measurements.
[3] V_DS * I_DQ < P_DISS is recommended for continuous reliable operation.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-103295 Rev A