SLD-2083CZ Datasheet, PDF (1/6 Pages) SIRENZA MICRODEVICES – 12 Watt Discrete LDMOS FET in Ceramic Package

Product Description
Sirenza Microdevices’ SLD-2083CZ is a robust 12 Watt high perfor-
mance LDMOS transistor designed for operation to 2700MHz. It is an
excellent solution for applications requiring high linearity and efficiency at
a low cost. The SLD-2083CZ is typically used in the design of driver
stages for power amplifiers, repeaters, and RFID applications. The power
transistor is fabricated using Sirenza’s high performance XeMOS II^TM
process.
Functional Schematic Diagram
ESD
Protection
SLD-2083CZ
Pb RoHS Compliant
& Green Package
12 Watt Discrete LDMOS FET in
Ceramic Package
Product Features
• 12 Watt Output P_1dB
• Single Polarity Supply Voltage
• High Gain: 18 dB at 915 MHz
• High Efficiency: 47% at 10W CW
• XeMOS II LDMOS
• Integrated ESD Protection, Class 1B
Case Flange = Ground
RF Specifications
Applications
• Base Station PA driver
• Repeaters
• RFID
• Military Communication
• GSM/CDMA
Symbol
Parameter
Unit
Min
Frequency
Frequency of Operation
MHz
10
Gain
10 Watt CW, 902 - 928MHz
dB
17
Efficiency
Drain Efficiency at 10 Watt CW, 915MHz
%
40
IRL
Input Return Loss, 10 Watt Output Power, 915MHz
3^rd Order IMD at 10 Watt PEP (Two Tone), 915MHz
dB
-
dBc
-
Linearity
1dB Compression (P_1dB), 915MHz
IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth,
ACPR=-55dB
Watt
Watt
IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth,
ACPR=-45dB
Watt
R_TH
Thermal Resistance (Junction-to-Case)
Test Conditions V_DS = 28.0V, I_DQ = 125mA, T_Flange = 25ºC
T
ºC/W
Typ
Max
-
2700
18
-
47
-
-15
-10
-28
-26
12
-
1.6
-
3.6
-
4
DC Specifications
Symbol
g_m
V_GSThreshold
V_DS Breakdown
C_iss
C_rss
C_oss
R_DSon
Parameter
Forward Transconductance @ 125mA I_DS
I_DS=3mA
1mA I_DS current
Input Capacitance (Gate to Source) V_GS=0V, V_DS=28V
Reverse Capacitance (Gate to Drain) V_GS=0V, V_DS=28V
Output Capacitance (Drain to Source) V_GS=0V, V_DS=28V
Drain to Source Resistance, V_GS=10V, V_DS=250mV
Unit
Min
Typical
Max
mA / V
590
Volt
3.8
Volt
65
pF
27.5
pF
0.81
pF
14.65
Ω
0.6
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-103754 Rev E