SLD-2000 Datasheet, PDF (1/5 Pages) SIRENZA MICRODEVICES – 12 Watt Discrete LDMOS FET-Bare Die

Product Description
Sirenza Microdevices’ SLD2000 is a robust 12 Watt, high performance
LDMOS transistor die, designed for operation from 10 to 2700MHz. It
is an excellent solution for applications requiring high linearity and effi-
ciency. The SLD2000 is typically used as a driver or output stage for
power amplifier, or transmitter applications. These robust power tran-
sistors are fabricated using Sirenza’s high performance XEMOS II^TM
process.
SLD-2000
12 Watt Discrete LDMOS FET -Bare Die
Functional Schematic Diagram
ESD
Protection
Product Features
• 12 Watt Output P_1dB
• Single Polarity Operation
• 19dB Gain at 900 MHz
• XeMOS II^TM LDMOS
• Integrated ESD Protection, Class 1B
• Aluminum Topside Metallization
• Gold Backside Metallization
Gate
Manifold
Drain
Manifold
Source - Backside Contact
Applications
• Base Station PA Driver
• Repeaters
• Military Communications
• RFID
• GSM, CDMA, Edge, WDCDMA
RF Specifications
Symbol
Parameter
Unit
Min
Typ
Max
Frequency
Frequency of Operation
MHz
10
-
2700
Gain
10 Watt CW, 902 - 928MHz
dB
-
19
-
Efficiency
Linearity
Drain Efficiency at 10 Watt CW, 915MHz
3^rd Order IMD at 10 Watt PEP (Two Tone), 915MHz
%
-
47
-
dBc
-
-32
-
Linearity
R_TH
1dB Compression (P_1dB)
Thermal Resistance (Junction-to-Case, mounted in package)
W
-
12
-
ºC/W
-
4
-
Test Conditions: Mounted in ceramic package and tested in Sirenz_Ta Evaluation Board V_DS = 28.0V, I_DQ = 150mA, T_{Mounting Surface} = 25ºC
DC Specifications
Symbol
g_m
V_GS Threshold
V_DS Breakdown
C_iss
C_rss
C_oss
R_DSON
Parameter
Forward Transconductance @ 125mA I_DQ, V_DS=28V
I_DS=3mA
1mA V_DS current
Input Capacitance (Gate to Source) V_GS=0V, V_DS=28V
Reverse Capacitance (Gate to Drain) V_GS=0V, V_DS=28V
Output Capacitance (Drain to Source) V_GS=0V, V_DS=28V
Drain to Source Resistance, V_GS=10V V_DS=250mV
Unit
Min
Typical
Max
mA / V
590
V
3.0
3.8
5.0
V
65
70
pF
27.5
pF
0.8
pF
14.7
R
0.6
0.75
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-104292 Rev C