SLD-1083CZ Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – 4 Watt Discrete LDMOS FET in Ceramic Package

Product Description
Sirenza Microdevices’ SLD-1083CZ is a robust 4 Watt high perfor-
mance LDMOS transistor designed for operation from to 2700MHz. It is
an excellent solution for applications requiring high linearity and effi-
ciency at a low cost. The SLD-1083CZ is typically used in the design of
driver stages for power amplifiers, repeaters, and RFID applica-
tions.The power transistor is fabricated using Sirenza’s latest, high per-
formance LDMOS II process.
Functional Schematic Diagram
ESD
Protection
SLD-1083CZ
4 Watt Discrete LDMOS FET in
Ceramic Package
Pb RoHS Compliant
& Green Package
Product Features
• 4 Watt Output P_1dB
• Single Polarity Supply Voltage
• High Gain: 18 dB at 915 MHz
• High Efficiency: 43% at 3W CW
• XeMOS II LDMOS
• Integrated ESD Protection, Class 1B
Case Flange = Ground
RF Specifications
Applications
• Base Station PA driver
• Repeaters
• RFID
• Military Communication
• GSM/CDMA
Symbol
Parameter
Unit
Min
Frequency
Frequency of Operation
MHz
-
Gain
3 Watt CW, 902-928MHz
dB
18
Efficiency
Drain Efficiency at 3 Watt CW, 915MHz
%
40
IRL
Input Return Loss, 3 Watt Output Power, 915MHz
3^rd Order IMD at 3 Watt PEP (Two Tone), 915MHz
dB
-9.5
dBc
-
Linearity
1dB Compression (P_1dB), 915MHz
Watt
-
IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth,
ACPR=-55dB
dBm
-
IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth,
ACPR=-45dB
dBm
-
R_TH
Thermal Resistance (Junction-to-Case)
ºC/W
Test Conditions V_DS = 28.0V, I_DQ = 50mA, T_Flange = 25ºC
Typ
Max
-
2700
19
-
43
-
-12
-
-30
-26
4
-
21
-
29
-
11
DC Specifications
Symbol
g_m
V_GS Threshold
V_GS Quiescent
V_DS Breakdown
C_iss
C_rss
C_oss
R_DSon
Parameter
Forward Transconductance @ 30mA I_DS
I_DS=3mA, V_DS=28V
I_DS=50mA, V_DS=28V
1mA V_DS current
Input Capacitance (Gate to Source) V_GS=0V V_DS=28V
Reverse Capacitance (Gate to Drain) V_GS=0V V_DS=28V
Output Capacitance (Drain to Source) V_GS=0V V_DS=28V
Drain to Source Resistance, V_GS=10V V_DS=250mV
Unit
Min
Typical
Max
mA / V
150
Volts
4.2
Volts
3
4
5
Volts
65
pF
5.2
pF
0.2
pF
3.2
Ω
3.0
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-104013 Rev F