SHF-0186 Datasheet, PDF (1/4 Pages) Stanford Microdevices – DC-12 GHz, 0.5 Watt AlGaAs/GaAs HFET

Product Description
Sirenza Microdevices’ SHF-0186 is a high performance AlGaAs/
GaAs Heterostructure FET (HFET) housed in a low-cost surface-
mount plastic package. The HFET technology improves
breakdown voltage while minimizing Schottky leakage current
resulting in higher PAE and improved linearity.
Output power at 1dB compression for the SHF-0186 is +28
dBm when biased for Class AB operation at 8V,100mA. The
+40 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. It is well suited for
use in both analog and digital wireless communication
infrastructure and subscriber equipment including 3G, cellular,
PCS, fixed wireless, and pager systems
Typical Gain Performance (8V,100mA)
40
30
Gmax
20
10
Gain
0
-10
0
2
4
6
8 10 12
Frequency (GHz)
SHF-0186
0.05-12 GHz, 0.5 Watt
GaAs HFET
Pending Obsolescence
Last Time Buy Date: March 15, 2004
Product Features
• +28 dBm Output Power at 1dB Compression
• +40 dBm Output IP3
• High Drain Efficiency
• 18 dB Gain at 900 MHz (Application circuit)
• 15 dB Gain at 1960 MHz (Application circuit)
• See App Note AN-020 for circuit details
Applications
• Analog and Digital Wireless Systems
• 3G, Cellular, PCS
• Fixed Wireless, Pager Systems
Symbol
Gmax
S₂₁
G
OIP3
P1dB
I_DSS
g_m
V_P
BV_GS
BV_GD
Rth
V_DS
I_DS
T_J
Device Characteristics, T = 25°C
V_DS=8V, I_DQ=100mA (unless otherwise noted)
Maximum Available Gain
Z_S=Z_S*, Z_L=Z_L*
Insertion Gain
Z_S=Z_L= 50 Ohms
Power Gain
Z_S=Z_SOPT , Z_L=Z_LOPT
Output Third Order Intercept Point
Z_S=Z_SOPT , Z_L=Z_LOPT , P_OUT= +15 dBm per tone
Output 1dB Compression Point
Z_S=Z_SOPT, Z_L=Z_LOPT
Saturated Drain Current
V_DS= V_DSP, V_GS= 0V
Tranconductance
V_DS= V_DSP, V_GS= -0.25V
Pinch-Off Voltage
V_DS= 2V, I_DS= 0.6mA
Gate-to-Source Breakdown Voltage
I_GS= 1.2mA, drain open
Gate-to-Drain Breakdown Voltage
I_GD= 1.2mA, V_GS= -5V
Thermal Resistance (junction-to-lead)
Operating Voltage (drain-to-source)
Operating Current (drain-to-source, quiescent)
Recommended Operating Junction Temperature
Test Frequency
[1] = 100% Tested
[2] = Sample Tested
f = 900 MHz
f = 1960 MHz
f = 12000 MHz [1]
f = 900 MHz
f = 1900 MHz [1]
f = 900 MHz
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz [2]
[1]
[1]
[1]
Units
dB
dB
dBm
dBm
dBm
mA
mS
V
V
V
o_C/W
V
mA
C
Min.
-
-
4.0
-
14.0
-
-
-
-
-
-
204
144
-3.0
-
-
-
-
-
-
Typ.
23.4
20.1
5.0
18.0
15.0
17.9
14.5
41
40
28
28
294
198
-1.9
-17
-22
66
-
-
-
Max.
-
-
-
-
16.0
-
-
-
-
-
-
384
252
-1.0
-15
-17
-
9.0
200
150
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-101574 Rev C