SGL-0263 Datasheet, PDF (1/5 Pages) SIRENZA MICRODEVICES – 1400 - 2500 MHz Silicon Germanium Cascadable Low Noise Amplifier

Product Description
The SGL-0263 is a high performance SiGe HBT MMIC low noise am-
plifier featuring 1 micron emitters with F up to 50 GHz. This device
T
has an internal temperature compensation circuit permitting opera-
tion directly from supply voltages as low as 2.5V. The SGL-0263 has
been characterized at Vd = 3V for low power and 4V for medium
power applications. Only 2 DC-blocking capacitors, 2 input matching
components, a bias resistor, and an optional RF choke are required
for operation from 1400-2500 MHz.
The matte tin finish on Sirenza’s lead-free “Z” package is applied
using a post annealing process to mitigate tin whisker formation
and is RoHS compliant per EU Directive 2002/95. The package
body is manufactured with green molding compounds that contain
no antimony trioxide or halogenated fire retardants.
Temperature
Compensation
Circuit
RF In
V_S
RF Out / V_S
SGL-0263
SGL-0263Z ^{Pb RoHS Compliant}
& Green Package
1400 - 2500 MHz Silicon Germanium
Cascadable Low Noise Amplifier
Product Features
• Available in Lead Free, RoHS Compliant
green package ( Z Suffix )
• High Input / Output Intercept
• Low Noise Figure: 1.3dB typ. at 1900 MHz
• Low Power Consumption
• Single Voltage Supply Operation
• Internal Temperature Compensation
Applications
• Receivers, GPS, RFID
• Cellular, Fixed Wireless, Land Mobile
Symbol
Parameter
G Small Signal Gain
Freq.
(MHz)
1900
2100
2400
Min.
(V_S=3V)
12.1
Typ.
(V_S=3V)
13.4
12.5
10.8
Max.
(V_S=3V)
14.7
Typ.
(V_S=4V)
13.8
12.9
11.3
Units
dB
P_1dB Output Power at 1dB Compression
1900 3.5
5.5
2100
6.8
2400
7.9
11.4
12.3 dBm
12.8
Input Third Order Intercept Point
IIP₃
Tone Spacing = 1 MHz
Pout per tone = -13dBm
1900 7.5
9.5
2100
13.5
2400
15.5
15.1
16.8
18.4
dBm
NF Noise Figure, Z_S = 50 Ohms
1900
2100
2400
1.3
1.7
1.9
1.5
2.1
dB
2.0
2.8
IRL Input Return Loss
1900 10.0 13.3
21.9
dB
ORL Output Return Loss
1900 10.0 12.9
17.4
dB
|S₁₂| Reverse Isolation
1900
20.7
21.0
dB
I_D
Device Current
9.0
12.5
15
23
mA
R_TH,j-l Thermal Resistance (junction to lead)
255
o_C/W
Test Conditions: 1400-2500 MHz Application Circuit T_LEAD = 25ºC Z₀ = Z_L = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 South Technology Court
Broomfield, CO 80021
EDS-101502 Rev C
1
Phone: (800) SMI-MMIC
http://www.sirenza.com