SGC-6389Z Datasheet, PDF (1/6 Pages) SIRENZA MICRODEVICES – 50-4000 MHz Silicon Germanium Cascadable Gain Block

Preliminary Information
Product Description
Sirenza Microdevices’ SGC-6389Z is a high performance SiGe HBT MMIC
amplifier utilizing a Darlington configuration with an active bias network.
The active bias network provides stable current over temperature and
process Beta variations. Designed to run directly from a 5V supply, the
SGC-6389Z does not require a drop resistor as compared to typical
Darlington amplifiers. The SGC-6389Z product is designed for high
linearity 5V gain block applications that require small size and minimal
external components. It is internally matched to 50 ohms.
The matte tin finish on Sirenza’s lead-free “Z” package is applied using
a post annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. The package body is
manufactured with green molding compounds that contain no antimony
trioxide or halogenated fire retardants.
Gain & Return Loss vs. Frequency
V_D = 5V, I_D = 85mA (Typ.)
20
0
15
-10
10
5
0
0
Gain
IRL
ORL
* No external components and wide band bias tee
ZS = ZL = 50 ohms, Tlead=25C
1
2
3
Frequency (GHz)
-20
-30
-40
4
Typical performance with appropriate application circuit
SGC-6389Z Pb RoHS Compliant
& Green Package
50-4000 MHz Silicon Germanium
Cascadable Gain Block
Product Features
• Single Fixed 5V Supply
• Supply Drop Resistor not required
• Patented Self Bias Circuitry
• P1dB = 18.6 dBm at 1950 MHz
• IP3 = 34.6 dBm at 1950 MHz
• Robust 1000V ESD, Class 1C HBM
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameters
G
Small Signal Gain
P_1dB
Output Power at 1dB Compression
OIP₃
IRL
Output Third Order Intercept Point
Input Return Loss
Units Frequency Min.
Typ.
Max.
dB
850 MHz
16.7
1950 MHz
13.1
dBm
850 MHz
19.5
1950 MHz
18.6
dBm
850 MHz
35.8
1950 MHz
34.6
dB
1950 MHz
12.6
ORL Output Return Loss
dB
1950 MHz
11.7
NF
Noise Figure
dB
1930 MHz
4.0
V_D
Device Operating Voltage
V
I_D
Device Operating Current
mA
Rth, j-l Thermal Resistance (junction to lead)
°C/W
Test Conditions: V_S = 5.0V
I_D = 85mA Typ.
Z_S = Z_L = 50 Ohms
OIP₃ Tone Spacing = 1MHz
Pout per tone = 0 dBm
5.0
85
60
T_L = 25°C
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-104747 Rev A