SGC-6386Z_1 Datasheet, PDF (1/6 Pages) SIRENZA MICRODEVICES – 50-4000 MHz Silicon Germanium Cascadable Gain Block

Preliminary Information
Product Description
Sirenza Microdevices’ SGC-6386Z is a high performance SiGe HBT MMIC
amplifier utilizing a Darlington configuration with an active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 5V supply, the SGC-6386Z
does not require a drop resistor as compared to typical Darlington amplifiers.
The SGC-6386Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50 ohms.
The matte tin finish on Sirenza’s lead-free “Z” package is applied using a
post annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. The package body is manufactured
with green molding compounds that contain no antimony trioxide or
halogenated fire retardants.
Gain & Return Loss vs. Frequency
V_D = 5V, I_D = 80mA (Typ.)
20
0
Gain
IRL
15
ORL
-10
10
-20
5
-30
* No external components and wide band bias tee
ZS = ZL = 50 ohms, Tlead=25C
0
-40
0
1
2
3
4
Frequency (GHz)
Typical performance with appropriate application circuit
SGC-6386Z Pb RoHS Compliant
& Green Package
50-4000 MHz Silicon Germanium
Cascadable Gain Block
Product Features
• Single Fixed 5V Supply
• Supply Drop Resistor not required
• Patented Self Bias Circuitry
• P1dB = 18.3 dBm at 1950 MHz
• IP3 = 34.3 dBm at 1950 MHz
• Robust 1000V ESD, Class 1C HBM
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
G
Parameters
Small Signal Gain
P_1dB
Output Power at 1dB Compression
OIP₃
IRL
Output Third Order Intercept Point
Input Return Loss
Units
dB
dBm
dBm
dB
Frequency
850 MHz
1950 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
1950 MHz
ORL Output Return Loss
dB
1950 MHz
NF
Noise Figure
dB
1930 MHz
V_D
Device Operating Voltage
V
I_D
Device Operating Current
mA
Rth, j-l Thermal Resistance (junction to lead)
°C/W
Test Conditions: V_D = 5.0V
I_D = 80mA Typ.
OIP₃ Tone Spacing = 1MHz
Z_S = Z_L = 50 Ohms
Pout per tone = 0 dBm
Min.
Typ.
16.3
11.9
19.3
18.3
35.6
34.3
18.0
17.0
4.2
5.0
80
106
T_L = 25°C
Max.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-104746 Rev A