SGC-4386Z Datasheet, PDF (1/5 Pages) SIRENZA MICRODEVICES – 50-4000 MHz Silicon Germanium Cascadable Gain Block

Preliminary Information
Product Description
SGC-4386Z Pb RoHS Compliant
& Green Package
Sirenza Microdevices’ SGC-4386Z is a high performance SiGe HBT MMIC
amplifier utilizing a Darlington configuration with a patented active bias _{50-4000 MHz Silicon Germanium}
network. The active bias network provides stable current over temperature
and process Beta variations. Designed to run directly from a 3V supply, the
Cascadable Gain Block
SGC-4386Z does not require a dropping resistor as compared to typical
Darlington amplifiers. The SGC-4386Z is designed for high linearity 3V gain
block applications that require small size and minimal external components.
It is internally matched to 50 ohms.
The matte tin finish on Sirenza’s lead-free “Z” package is applied using a
post annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. The package body is manufactured
with green molding compounds that contain no antimony trioxide or _{Product Features}
halogenated fire retardants.
• Single Fixed 3V Supply
Gain & Return Loss V_D = 3V, I_D = 54mA (Typ.)
20
0
• Supply Dropping Resistor not required
• Patented Self-Bias Circuitry
15
S21
S22
• P1dB = 12.4 dBm at 1950 MHz
-10
• IP3 = 27 dBm at 1950 MHz
S11
• Robust 1000V ESD, Class 1C HBM
10
-20
Applications
5
Bias Tee Data, Z_S = Z_L = 50 Ohms, T_L = 25C
0
0
1
2
3
Frequency (GHz)
-30
-40
4
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameters
G
Small Signal Gain
P_1dB
Output Power at 1dB Compression
OIP₃
IRL
Output Third Order Intercept Point
Input Return Loss
Units
dB
dBm
dBm
dB
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
2400 MHz
1950 MHz
Min.
Typ.
16.4
12.2
10.9
13.4
12.4
11.8
29.4
27.0
25.8
16.4
Max.
ORL Output Return Loss
dB
1950 MHz
14.8
NF
Noise Figure
dB
1930 MHz
3.9
V_D
Device Operating Voltage
V
3
I_D
Device Operating Current
mA
50
54
58
Rth, j-l Thermal Resistance (junction to lead)
°C/W
145
Test Conditions: V_D = 3.0V
I_D = 54mA Typ.
Bias Tee Data
T_L = 25°C
Z_S = Z_L = 50 Ohms
OIP₃ Tone Spacing = 1MHz
Pout per tone = -5 dBm
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-104976 Rev A