SGA-9289 Datasheet, PDF (1/4 Pages) Stanford Microdevices – Silicon Germanium HBT Amplifier

Preliminary
SGA-9289
Product Description
SGA-9289Z
Pb RoHS Compliant
& Green Package
Sirenza Microdevices’ SGA-9289 is a high performance transistor
designed for operation to 3 GHz. With optimal matching at 2 GHz,
OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on
a Silicon Germanium Heterostructure Bipolar Transistor (SiGe
HBT) process. The SGA-9289 is cost-effective for applications
requiring high linearity even at moderate biasing levels. It is well
suited for operation at both 5V and 3V.
Medium Power Discrete SiGe Transistor
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. This package is also
manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
Typical Gmax, OIP3, P1dB @ 5V,270mA
25
44
23
42
21
OIP3
40
19
38
17
36
15
Gmax
34
13
32
11
30
P1dB
9
28
7
26
5
24
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
Product Features
• Available in RoHS compliant Green packaging
• 50-3000 MHz Operation
• 42.5 dBm Ouput IP3 Typical at 1.96 GHz
• 12.0 dB Gain Typical at 1.96 GHz
• 27.5 dBm P1dB Typical at 1.96 GHz
• 2.4 dB NF Typical at 0.9 GHz
• Cost Effective
• 3-5 V Operation
Applications
• Wireless Infrastructure Driver Amplifiers
• CATV Amplifiers
• Wireless Data, WLL Amplifiers
• AN-022 contains detailed application circuits
Symbol
Device Characteristics, T = 25ºC
V_CE = 5V, I_CQ =280mA (unless otherwise noted)
Test Frequency
[1] 100% Tested
[2] Sample Tested
Units
Min.
Typ.
Max.
G_MAX
G
P1dB
OIP₃
NF
BV_CEO
h_FE
Rth
V_CE
I
Maximum Available Gain
Z_S=Z_S*, Z_L=Z_L*
Power Gain
Z_S=Z_SOPT, Z_L=Z_LOPT
Output 1dB Compression Point
Z_S=Z_SOPT, Z_L=Z_LOPT
Output Third Order Intercept Point
Z_S=Z_SOPT, Z_L=Z_LOPT, P_OUT= +13 dBm per tone
Noise Figure
Z_S=Z_SOPT, Z_L=Z_LOPT
Collector - Emitter Breakdown Voltage
DC current gain
Thermal Resistance (junction-to-lead)
Operating Voltage (collector-to-emitter)
Operating Current
f = 900 MHz
f = 1960 MHz
dB
20.5
13.1
f = 900 MHz [1]
f = 1960 MHz [2]
dB
16.2
11.0
17.7
12.0
19.2
13.0
f = 900 MHz
f = 1960 MHz [2]
dBm
26.0
28.0
27.5
f = 900 MHz
f = 1960 MHz [2]
dBm
40.0
42.0
42.5
f = 900 MHz
f = 1960 MHz
dB
2.4
2.5
V
7.5
8.5
100
180
300
ºC/W
32
V
5.5
mA
250
280
320
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility
for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the
circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101498 Rev G