SGA-9189 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Silicon Germanium HBT Amplifier

Product Description
Sirenza Microdevices’ SGA-9189 is a high performance transistor designed
for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and
P1dB=25.5 dBm. This RF device is based on a Silicon Germanium
Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is
cost-effective for applications requiring high linearity even at moderate
biasing levels. It is well suited for operation at both 5V and 3V.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU Directive
2002/95. This package is also manufactured with green molding compounds
that contain no antimony trioxide nor halogenated fire retardants.
Typical Gmax, OIP3, P1dB @ 5V,180mA
25
44
23
OIP3
42
21
40
19
38
17
36
Gmax
15
34
13
32
11
30
9
P1dB
28
7
26
5
24
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
SGA-9189
SGA-9189Z
Pb RoHS Compliant
& Green Package
Medium Power Discrete SiGe Transistor
Product Features
• Available in RoHS compliant Green packaging
• 50-3000 MHz Operation
• 39 dBm Ouput IP3 Typical at 1.96 GHz
• 12.2 dB Gain Typical at 1.96 GHz
• 25.5 dBm P1dB Typical at 1.96 GHz
• 2.1 dB NF Typical at 0.9 GHz
• Cost Effective
• 3-5 V Operation
Applications
• Wireless Infrastructure Driver Amplifiers
• CATV Amplifiers
• Wireless Data, WLL Amplifiers
• AN-021 contains detailed application circuits
Symbol
Device Characteristics, T = 25ºC
V_CE = 5V, I_CQ =180mA (unless otherwise noted)
Test Frequency
[1] 100% Tested
[2] Sample Tested
Units
Min.
Typ.
Max.
G_MAX
G
P1dB
OIP₃
NF
BV_CEO
h_FE
Rth
Maximum Available Gain
Z_S=Z_S*, Z_L=Z_L*
Power Gain
Z_S=Z_SOPT, Z_L=Z_LOPT
Output 1dB Compression Point
Z_S=Z_SOPT, Z_L=Z_LOPT
Output Third Order Intercept Point
Z_S=Z_SOPT, Z_L=Z_LOPT, P_OUT= +10 dBm per tone
Noise Figure
Z_S=Z_SOPT, Z_L=Z_LOPT
Collector - Emitter Breakdown Voltage
DC current gain
Thermal Resistance (junction-to-lead)
f = 900 MHz
f = 1960 MHz
f = 900 MHz [1]
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz
dB
dB
dBm
dBm
dB
V
ºC/W
17.5
11.2
23.5
36.5
7.5
100
20.5
13.2
19.0
12.2
25.8
25.5
40.0
39.0
2.1
2.6
8.5
180
47
20.5
13.2
300
V_CE
Operating Voltage (collector-to-emitter)
I
Operating Current
V
5.5
mA
155
180
195
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-101497 Rev H