SGA-9089Z Datasheet, PDF (1/4 Pages) SIRENZA MICRODEVICES – High IP3 Medium Power Discrete SiGe Transistor

Preliminary
SGA-9089Z
Product Description
Sirenza Microdevices’ SGA-9089Z is a high performance Silicon Germanium
Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from
DC to 4.0 GHz. The SGA-9089Z is optimized for 3.0V operation. The device
provides excellent linearity at a low cost. It can be operated over a wide
range of currents depending on the power and linearity requirements.
High IP3, Medium Power Discrete
SiGe Transistor
Pb ^{RoHS Compliant}
& Green Package
The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post
annealing process to mitigate tin whisker formation and is RoHS compliant per
EU Directive 2002/95. The package body is manufactured with green molding
compounds that contain no antimony trioxide or halogenated fire retardants.
Typical Gmax, OIP3, P1dB V_CE=3.0V, I_CE=170mA
24
41
22
38
20
OIP3
35
18
Gmax
32
16
29
Product Features
• DC-4 GHz Operation
• Lead Free, RoHS Compliant & Green Package
• 15.0 dB Gmax @ 2.44 GHz
• P_1dB = +23.8 dBm @ 2.44 GHz
• OIP₃ = +37.5 dBm @ 2.44 GHz
• 3.1 dB NF @ 2.44 GHz
• Low Cost, High Performance, Versatility
14
26
12
23
P1dB
10
20
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
Applications
• Analog and Digital Wireless Systems
• 3G, Cellular, PCS, RFID
• Fixed Wireless, Pager Systems
• PA stage for Medium Power Applications
Symbol
Parameters
Units
Frequency
Min.
Typ.
Max.
G_MAX
G
P_1dB
Maximum Available Gain
Z_S=Z_S*, Z_L=Z_L*
Power Gain
Z_S=Z_SOPT, Z_L=Z_LOPT
Output Power at 1dB Compression ^[2]
Z_S=Z_SOPT, Z_L=Z_LOPT
dB
dB
dBm
880 MHz
1960 MHz
2440 MHz
880 MHz ^[1]
1960 MHz ^[2]
2440 MHz ^[2]
880 MHz
1960 MHz
2440 MHz
23.2
16.4
15.0
18.0
13.0
11.0
23.7
23.7
23.8
OIP₃
Output Third Order Intercept Point ^[2]
Z_S=Z_SOPT, Z_L=Z_LOPT
dBm
880 MHz
1960 MHz
2440 MHz
37.4
37.5
37.5
NF
Noise Figure ^[2]
Z_S=Z_SOPT, Z_L=Z_LOPT
880 MHz
3.2
dB
1960 MHz
3.1
2440 MHz
3.1
h_FE
DC Current Gain
100
180
300
BV_CEO
Collector - Emitter Breakdown Voltage
V
5.7
6
Rth, j-l
Thermal Resistance (Junction - lead)
°C/W
48
V_CE
Device Operating Voltage (collector- emitter)
V
3.8
I_CE
Device Operating Current (collector - emitter)
mA
220
Test Conditions: V_CE = 3.0V, I_CE = 170mA Typ. (unless noted otherwise), T_L = 25°C OIP₃ Tone Spacing = 1MHz, Pout per tone = 10 dBm
[1] 100% production tested with Application Circuit
[2] Data with Application Circuit
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-105051 Rev B