SGA-8543Z Datasheet, PDF (1/4 Pages) SIRENZA MICRODEVICES – High IP3 Medium Power Discrete SiGe Transistor

Preliminary
Product Description
Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium
Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from
DC to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can be
biased at 2.7V for low-voltage battery operated systems. The device provides
low NF and excellent linearity at a low cost. It can be operated over a wide
range of currents depending on the power and linearity requirements.
SGA-8543Z
Pb RoHS Compliant
& Green Package
High IP3, Medium Power Discrete
SiGe Transistor
The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post
annealing process to mitigate tin whisker formation and is RoHS compliant per
EU Directive 2002/95. The package body is manufactured with green molding
compounds that contain no antimony trioxide or halogenated fire retardants.
Typical Gmax, OIP3, P1dB @3.3V, 86mA
31
38
28
35
25
OIP3
32
22
29
19
Gmax
26
16
23
13
20
P1dB
10
17
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
Product Features
• DC-3.5 GHz Operation
• Lead Free, RoHS Compliant & Green Package
• 1.5 dB NF_MIN @ 2.44 GHz
• 15.6 dB Gmax @ 2.44 GHz
• P_1dB = +20.6 dBm @ 2.44 GHz
• OIP₃ = +34.6 dBm @ 2.44 GHz
• Low Cost, High Performance, Versatility
Applications
• Analog and Digital Wireless Systems
• 3G, Cellular, PCS, RFID
• Fixed Wireless, Pager Systems
• PA stage for Medium Power Applications
• AN-079 contains detailed application circuits
Symbol
Parameters
Units
Frequency
Min.
Typ.
Max.
G_MAX
Maximun Available Gain
Z_S=Z_S*, Z_L=Z_L*
dB
880 MHz
22.9
2440 MHz
15
S₂₁
Insertion Gain ^[1]
G
Power Gain ^[2]
Z_S=Z_SOPT, Z_L=Z_LOPT
dB
880 MHz
18
dB
880 MHz
19
2440 MHz
14
P_1dB
Output Power at 1dB Compression ^[2]
Z_S=Z_SOPT, Z_L=Z_LOPT
dBm
880 MHz
2440 MHz
20
20.6
OIP₃
Output Third Order Intercept Point ^[2]
Z_S=Z_SOPT, Z_L=Z_LOPT
dBm
880 MHz
2440 MHz
33.4
34.6
NF
Noise Figure ^[2]
Z_S=Z_SOPT, Z_L=Z_LOPT
dB
880 MHz
3.1
2440 MHz
2.4
NFmin
Minimum Noise Figure with I_CE = 25mA
Z_S= Γ_OPT, Z_L=Z_L*
dB
880 MHz
2440 MHz
1.0
1.5
h_FE
DC Current Gain
120
180
300
BV_CEO Collector - Emitter Breakdown Voltage
V
5.7
6
Rth, j-l Thermal Resistance (Junction - lead)
°C/W
151
V_CE
Device Operating Voltage (collector- emitter)
V
3.8
I_CE
Device Operating Current (collector - emitter)
mA
95
Test Conditions: V_CE = 3.3V, I_CE = 86mA Typ. (unless noted otherwise), T_L = 25°C OIP₃ Tone Spacing = 1MHz, Pout per tone = 5 dBm
[1] 100% production tested using 50 ohm contact board (no matching circuitry)
[2] Data with Application Circuit
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-102583 Rev B