SGA-8343 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Low Noise, High Gain SiGe HBT

Product Description
Sirenza Microdevices’ SGA-8343 is a high performance Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT)
designed for operation from DC to 6 GHz. The SGA-8343 is
optimized for 3V operation but can be biased at 2V for low-voltage
battery operated systems. The device provides high gain, low NF,
and excellent linearity at a low cost. It can be operated at very low
bias currents in applications where high linearity is not required.
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS
compliant per EU Directive 2002/95. This package is also
manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
40
35
30
25
20
15
10
5
0
0
Typical Performance - 3V, 10mA
NF_MIN
Gmax
Gain
123 4567
Frequency (GHz)
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
8
SGA-8343
SGA-8343Z ^{Pb RoHS Compliant}
& Green Package
Preliminary
Low Noise, High Gain SiGe HBT
Product Features
• Now Available in Lead Free, RoHS
Compliant, & Green Packaging
• DC-6 GHz Operation
• 0.9 dB NF_MIN @ 0.9 GHz
• 24 dB Gmax @ 0.9 GHz
• |G_OPT|=0.10 @ 0.9 GHz
• OIP3 = +28 dBm, P1dB = +9 dBm
• Low Cost, High Performance, Versatility
Applications
• Analog and Digital Wireless Systems
• 3G, Cellular, PCS, RFID
• Fixed Wireless, Pager Systems
• Driver Stage for Low Power Applica-
tions
• Oscillators
Symbol
Device Characteristics
Test Conditions
V_CE=3V, I_CQ=10mA, 25°C
(unless otherwise noted)
Test Frequency
Units
Min.
Typ.
Max.
G_MAX
Maximum Available Gain
Z_S=Z_S*, Z_L=Z_L*
0.9 GHz
1.9 GHz
dB
2.4 GHz
23.9
19.3
17.7
NF
Minimum Noise Figure
0.9 GHz
Z_S=Gamma_OPT, Z_L=Z_L*
1.9 GHz
dB
2.4 GHz
0.94
1.10
1.18
S₂₁
Insertion Gain^[1]
NF
Noise Figure^[2]
Z_S=Z_L= 50 Ohms
LNA Application
Circuit Board
0.9 GHz
1.9 GHz
dB
21.0
22.0
23.0
dB
1.40
1.75
Gain
Gain^[2]
LNA Application
Circuit Board
1.9 GHz
dB
15.5
16.5
17.5
OIP₃
Output Third Order Intercept Point^[2]
LNA Application
Circuit Board
1.9 GHz
dBm
25.8
27.8
P_1dB
Output 1dB Compression Point^[2]
LNA Application
Circuit Board
1.9 GHz
dBm
7.5
9.0
h_FE
BV_CEO
Rth
DC Current Gain
Collector-Emitter Breakdown Voltage
Thermal Resistance
junction-to-lead
V
o_C/W
120
5.7
180
6.0
200
300
V_CE
Operating Voltage
I_CE
Operating Current
collector-emitter
collector-emitter
V
4.0
mA
50
[1] 100% tested - Insertion gain tested using a 50 ohm contact board (no matching circuitry) during final production test.
[2] Sample tested - Samples pulled from each wafer/package lot. Sample test specifications are based on statistical data from sample test measurements. The test fixture is
an engineering application circuit board (parts are pressed down on the circuit board). The application circuit represents a trade-off between the optimal noise match and
input return loss.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
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EDS-101845 Rev F