SGA-7489_1 Datasheet, PDF (1/6 Pages) SIRENZA MICRODEVICES – DC-3000 MHz Silicon Germanium HBT Cascadeable Gain Block

Product Description
Sirenza Microdevices’ SGA-7489 is a high performance SiGe
heterojunction bipolar transistor MMIC amplifier. A Darlington
configuration featuring 1 micron emitters provides high F_T and
excellent thermal performance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products.
SGA-7489
DC-3000 MHz Silicon Germanium
HBT Cascadeable Gain Block
Basic circuit operation is achieved with just a single supply
voltage, DC blocking and bypass capacitors, a bias resistor,
and a bias inductor. Simple capacitive tuning may be used to
extend high OIP3 performance to 2GHz.
Gain, Return Loss, and Isolation vs. Frequency
VD=5.0V, ID=115mA (Typ), TLEAD=+25C
30
0
25
Gain
20
Input Return
Loss
15
10
Output
Return Loss
5
Isolation
0
0
500
1000
1500
2000
Frequency (MHz)
2500
-5
-10
-15
-20
-25
-30
3000
Product Features
• DC-3000 MHz Operation
• Very High IF Output IP3: 39dBm at 100MHz
• High Output IP3: +35.5 dBm typ. at 850 MHz
• Low Noise Figure: 3.3 dB typ. at 1950 MHz
Applications
• Oscillator Amplifiers
• PA for Low / Medium Power Applications
• IF/ RF Buffer Amplifier
• Drivers for CATV Amplifiers
• LO Driver Amplifier
Symbol
Parameter
Freq. (MHz)
Min.
Typ.
Max.
Units
P_1dB
Output Power at 1dB Compression
850
1950
18.5
22.4
20.0
dBm
OIP₃
Output Third Order Intercept Point
* Using 2 GHz App.Ckt. (see page 5)
100
850
1950
1950 *
31.0
39.0
35.5
33.0
36.0 *
dBm
S₂₁
Small Signal Gain
850
1950
20.0
17.0
21.5
18.5
23.0
20.0
dB
Bandwidth Determined by Return Loss (>9dB)
3000
MHz
IRL
Input Return Loss
1950
10.3
15.0
dB
ORL
Output Return Loss
1950
9.0
11.0
dB
S₁₂
Reverse Isolation
1950
23.0
dB
NF
Noise Figure, Z_S = 50 Ohms
1950
3.3
4.3
dB
V_D
Device Operating Voltage
4.7
5.0
5.3
V
I_D
Device Operating Current
103
115
127
mA
R_TH, j-l
Thermal Resistance (junction - lead)
82
o _C/W
Test Conditions: ^{VS = 8 V ID = 115 mA Typ.}
Bias Resistance = 26 Ohms
OIP₃ Tone Spacing = 1 MHz, Pout per tone = 0 dBm
T_L = 25ºC
Z_S = Z_L = 50 Ohms
NOTE: The recommended operating current in the preliminary datasheet was 130mA. Supplemental measurements have
since shown that an operating current of 115mA results in optimal RF performance over temperature. Continued operation
at 130mA is reliable, however, the recommended operating current has been changed to 115mA.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-101801 Rev C