SGA-7489 Datasheet, PDF (1/4 Pages) Stanford Microdevices – DC-3000 MHZ SILICON GERMANIUM

SGA-7489
Product Description
The SGA-7489 is a high performance SiGe HBT
MMIC Amplifier. A Darlington configuration featuring
1 micron emitters provides high FT and excellent
thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction
non-linearities results in higher suppression of
intermodulation products. Only 2 DC-blocking ca-
pacitors, a bias resistor and an optional RF choke
are required for operation.
The matte tin finish on Sirenza’s lead-free package
utilizes a post annealing process to mitigate tin whis-
ker formation and is RoHS compliant per EU Direc-
tive 2002/95. This package is also manufactured
with green molding compounds that contain no an-
timony trioxide nor halogenated fire retardants.
Gain, Return Loss, and Isolation vs. Frequency
V_D=5.0V, I_D=115mA (Typ), T_LEAD=+25C
30
0
SGA-7489Z Pb RoHS Compliant
& Green Package
DC-3000 MHz Silicon Germanium
HBT Cascadeable Gain Block
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• DC-3000 MHz Operation
• Very High IF Output IP3: 39dBm at 100MHz
• High Output IP3: +35.5 dBm typ. at 850 MHz
• Low Noise Figure: 3.3 dB typ. at 1950 MHz
25
Gain
-5
20
Input Return
-10
Loss
15
-15
10
Output
Return Loss
-20
5
-25
Isolation
0
-30
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
Applications
• Oscillator Amplifiers
• PA for Low / Medium Power Applications
• IF/ RF Buffer Amplifier
• Drivers for CATV Amplifiers
• LO Driver Amplifier
Symbol
Parameter
Freq. (MHz)
Min.
Typ.
Max.
Units
P_1dB
Output Power at 1dB Compression
850
1950
18.5
22.4
20.0
dBm
OIP₃
Output Third Order Intercept Point
* Using 2 GHz App.Ckt. (see page 5)
100
850
1950
1950 *
31.0
39.0
35.5
33.0
36.0 *
dBm
S₂₁
Small Signal Gain
850
1950
20.0
17.0
21.5
18.5
23.0
20.0
dB
Bandwidth Determined by Return Loss (>9dB)
3000
MHz
IRL
Input Return Loss
1950
10.3
15.0
dB
ORL
Output Return Loss
1950
9.0
11.0
dB
S₁₂
Reverse Isolation
NF
Noise Figure, Z_S = 50 Ohms
1950
1950
23.0
dB
3.3
4.3
dB
V_D
Device Operating Voltage
4.7
5.0
5.3
V
I_D
R_TH, j-l
Device Operating Current
Thermal Resistance (junction - lead)
103
115
82
127
mA
o _C/W
Test Conditions:
V_S = 8 V I_D = 115 mA Typ.
OIP₃ Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Bias Resistance = 26 Ohms
T_L = 25ºC
Z_S = Z_L = 50 Ohms
NOTE: The recommended operating current in the preliminary datasheet was 130mA. Supplemental measurements have since shown
that an operating current of 115mA results in optimal RF performance over temperature. Continued operation at 130mA is reliable,
however, the recommended operating current has been changed to 115mA.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
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EDS-101801 Rev D