SGA-6586 Datasheet, PDF (1/4 Pages) Stanford Microdevices – DC-2500 MHz Silicon Germanium HBT Cascadeable Gain Block

SGA-6586
Product Description
The SGA-6586 is a high performance SiGe HBT MMIC
Amplifier. A Darlington configuration featuring 1 micron
emitters provides high FT and excellent thermal
perfomance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions.
Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. Only 2
DC-blocking capacitors, a bias resistor and an optional
RF choke are required for operation.
SGA-6586Z Pb RoHS Compliant
& Green Package
DC-4000 MHz, Cascadable
SiGe HBT MMIC Amplifier
The matte tin finish on Sirenza’s lead-free package uti-
lizes a post annealing process to mitigate tin whisker
formation and is RoHS compliant per EU Directive 2002/
95. This package is also manufactured with green mold-
ing compounds that contain no antimony trioxide nor ha-
logenated fire retardants.
Gain & Return Loss vs. Freq. @T_L=+25°C
32
0
GAIN
24
-10
IRL
16 ^ORL
-20
8
-30
0
-40
0
1
2
3
4
5
Frequency (GHz)
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• High Gain : 18.4 dB at 1950 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units Frequency Min. Typ. Max.
G
Small Signal Gain
dB
850 MHz
dB
1950 MHz
dB
2400 MHz
23.8
18.4
16.7
P_1dB
Output Power at 1dB Compression
dBm
dBm
850 MHz
1950 MHz
21.5
19.0
OIP₃ Output Third Order Intercept Point
dBm
dBm
850 MHz
1950 MHz
33.8
32.2
Bandwidth Determined by Return Loss (>10dB)
MHz
2500
IRL
Input Return Loss
dB
1950 MHz
21.4
ORL Output Return Loss
dB
1950 MHz
18.0
NF
Noise Figure
dB
1950 MHz
3.1
V_D
Device Operating Voltage
V
4.5
4.9
5.3
I_D
Device Operating Current
mA
72
80
88
R_TH, j-l Thermal Resistance (junction to lead)
°C/W
97
Test Conditions:
V_S = 8 V
R_BIAS = 39 Ohms
I_D = 80 mA Typ.
T_L = 25ºC
OIP₃ Tone Spacing = 1 MHz, Pout per tone = -5 dBm
Z_S = Z_L = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
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EDS-101160 Rev. D