SGA-5263 Datasheet, PDF (1/6 Pages) Stanford Microdevices – DC-4500 mhz silicon GERMANIUM CASCADEABLE GAIN BLOCK

Product Description
The SGA-5263 is a high performance SiGe HBT MMIC Amplifier.
A Darlington configuration featuring 1 micron emitters provides
high FT and excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-
linearities results in higher suppression of intermodulation prod-
ucts. Only 2 DC-blocking capacitors, a bias resistor and an
optional RF choke are required for operation.
SGA-5263
SGA-5263Z ^Pb &RoGHreSe^PCnorPm^eacp^lk^ilimaagnet^inary
DC-4500 MHz, Silicon Germanium Cascadeable
Gain Block
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. This package is
also manufactured with green molding compounds that contain
no antimony trioxide nor halogenated fire retardants.
Small Signal Gain vs. Frequency
15
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• DC-4500 MHz Operation
• Single Voltage Supply
• Low Current Draw: 60mA at 3.4V typ.
• High Output Intercept: 29 dBm typ. at 1950MHz
10
5
25C
-40C
85C
0
0.1
1
1.9
2.8
3.7
4.6
5.5
Frequency GHz
Applications
• Oscillator Amplifiers
• Broadband Gain Blocks
• IF/RF Buffer Amplifiers
Symbol
P_1dB
Parameters: Test Conditions:
Z₀ = 50 Ohms, I_D = 60 mA, T = 25ºC
Output Power at 1dB Compression
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
Units
dBm
dBm
dBm
Min.
Typ.
16.3
15.0
14.0
Max.
Third Order Intercept Point
IP₃
Power out per tone = -10 dBm
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
dBm
dBm
dBm
32.5
29.3
27.3
S₂₁
Small Signal Gain
f = 850 MHz
dB
f = 1950 MHz
dB
f = 2400 MHz
dB
13.3
12.6
12.3
Bandwidth
S₁₁
S₂₂
S₁₁, S₂₂: Minimum 10db Return Loss (typ.)
Input VSWR
Output VSWR
S₁₂
Reverse Isolation
f = 1950 MHz
f = 1950 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
MHz
-
-
dB
dB
dB
4500
1.2:1
1.4:1
18.3
19.2
19.5
NF
Noise Figure
f = 1950 MHz
dB
4.0
V_D
Device Operating Voltage
V
3.4
I_D
Device Operating Current
mA
54
60
66
R_th, j-l
Thermal Resistance (junction - lead)
ºC/W
255
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101540 Rev D