SGA-4563 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – DC-2500 MHZ SILICON GERMANIUM CASCADEABLE GAIN BLOCK

SGA-4563
Product Description
The SGA-4563 is a high performance SiGe HBT MMIC Amplifier.
A Darlington configuration featuring 1 micron emitters provides
high FT and excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-
linearities results in higher suppression of intermodulation
products. Only 2 DC-blocking capacitors, a bias resistor and an
optional RF choke are required for operation.
SGA-4563Z Pb RoHS Compliant
& Green Package
DC-2500 MHz, Cascadable
SiGe HBT MMIC Amplifier
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. This package is also
manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
blocking capacitors, a bias resistor and an optional RF choke are
required for operation.
Gain & Return Loss vs. Frequency
32
V_D= 3.5 V, I_D= 45 mA (Typ.)
0
GAIN
24
-10
ORL
16
-20
IRL
8
-30
0
-40
0
1
2
3
4
5
6
Frequency (GHz)
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• High Gain : 20.2 dB at 1950 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units Frequency Min. Typ. Max.
G
Small Signal Gain
850 MHz
dB
1950 MHz
2400 Mhz
25.6
20.2
18.6
P_1dB
Output Power at 1dB Compression
dBm
850 MHz
1950 MHz
15.0
12.8
OIP₃ Output Third Order Intercept Point
dBm
850 MHz
1950 MHz
27.1
26.2
Bandwidth Determined by Return Loss (>10dB)
MHz
2500
IRL Input Return Loss
dB
1950 MHz
19.9
ORL Output Return Loss
dB
1950 MHz
10.1
NF
Noise Figure
dB
1950 MHz
2.4
V_D
Device Operating Voltage
V
3.6
I_D
Device Operating Current
mA
41
45
49
R_TH, j-l Thermal Resistance (junction to lead)
°C/W
Test Conditions:
V_S = 8 V
I_D = 45 mA Typ.
R_BIAS = 100 Ohms T_L = 25ºC
255
OIP₃ Tone Spacing = 1 MHz, Pout per tone = -10 dBm
Z_S = Z_L = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
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EDS-101803 Rev. D