SGA-2363 Datasheet, PDF (1/5 Pages) Stanford Microdevices – DC-2800 MHz Silicon Germanium HBT Cascadeable Gain Block

SGA-2363
Product Description
SGA-2363Z
The SGA-2363 is a high performance SiGe HBT MMIC Amplifier. A
Pb RoHS Compliant
& Green Package
Darlington configuration featuring 1 micron emitters provides high
FT and excellent thermal perfomance. The heterojunction in- _{DC-5000 MHz, Cascadable}
creases breakdown voltage and minimizes leakage current be-
tween junctions. Cancellation of emitter junction non-linearities
SiGe HBT MMIC Amplifier
results in higher suppression of intermodulation products. Only
2 DC-blocking capacitors, a bias resistor and an optional RF choke
are required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a post
annealing process to mitigate tin whisker formation and is RoHS _{Product Features}
compliant per EU Directive 2002/95. This package is also manu-
factured with green molding compounds that contain no antimony ^{• Now available in Lead Free, RoHS}
trioxide nor halogenated fire retardants.
Compliant, & Green Packaging
Gain & Return Loss vs. Freq. @T_L=+25°C
24
0
• High Gain : 16.1 dB at 1950 MHz
• Cascadable 50 Ohm
GAIN
18
• Operates From Single Supply
-10
• Low Thermal Resistance Package
12
6
0
0
IRL
ORL
1
2
3
4
Frequency (GHz)
-20
-30
-40
5
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units Frequency Min. Typ. Max.
G
Small Signal Gain
850 MHz
15.8 17.5 19.3
dB
1950 MHz
16.1
2400 MHz
15.6
P_1dB
Output Power at 1dB Compression
dBm
850 MHz
1950 MHz
8.2
7.2
OIP₃ Output Third Order Intercept Point
dBm
850 MHz
1950 MHz
19.4
19.0
Bandwidth Determined by Return Loss (>10dB)
MHz
5000
IRL Input Return Loss
dB
1950 MHz
15.1
ORL Output Return Loss
dB
1950 MHz
25.5
NF
Noise Figure
dB
1950 MHz
3.2
V_D
Device Voltage
V
2.4
2.7
3.0
I_D
Device Operating Current
mA
17
20
23
R_TH, j-l Thermal Resistance (junction to lead) °C/W
255
Test Conditions:
V_S = 5 V
R_BIAS = 120 Ohms
I_D = 20 mA Typ.
T_L = 25ºC
OIP₃ Tone Spacing = 1 MHz, Pout per tone = -5 dBm
Z_S = Z_L = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100628 Rev D