SGA-0363 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – DC 5000 MHZ SILICON GERMANIUM CASCADEABLE GAIN BLOCK

SGA-0363
Preliminary
Product Description
The SGA-0363 is a high performance SiGe HBT MMIC Amplifier. A
Darlington configuration featuring 1 micron emitters provides high
FT and excellent thermal perfomance. The heterojunction in-
creases breakdown voltage and minimizes leakage current be-
tween junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only
2 DC-blocking capacitors, a bias resistor and an optional RF
choke are required for operation.
SGA-0363Z Pb RoHS Compliant
& Gre_Pen_reP_la_ic_mka_ig_ne_ary
DC-5000 MHz, Silicon Germanium
Cascadeable Gain Block
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. This package is also
manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
Small Signal Gain vs. Frequency
25
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• DC-5000 MHz Operation
• Single Voltage Supply
• Low Current Draw: 11mA at 2.5V typ.
• High Output Intercept: 14 dBm typ. at 1950MHz
20
15
10
5
0
0
1
2
3
4
5
6
Frequency GHz
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Frequency
Units
Min.
Typ.
Max.
850 MHz
dBm
2.3
P_1dB
Output Power at 1dB Compression
1950 MHz
dBm
2.3
2400 MHz
dBm
1.6
IP₃
Third Order Intercept Point
850 MHz
1950 MHz
2400 MHz
dBm
dBm
dBm
14.2
14.0
13.1
S₂₁
Small Signal Gain
850 MHz
dB
1950 MHz
dB
2400 MHz
dB
19.6
17.2
16.2
BW_3dB
VSWR_IN
VSWR_OUT
3dB Bandwidth
Input VSWR
Output VSWR
S₁₂
Reverse Isolation
DC - 4500MHz
DC - 4500MHz
850 MHz
1950 MHz
2400 MHz
MHz
-
-
dB
dB
dB
5000
1.8:1
1.7:1
24.0
22.8
22.1
NF
Noise Figure
1950 MHz
dB
3.0
V_D
Device Operating Voltage
V
2.5
I_D
Device Operating Current
mA
9
11
13
R_TH, j-l
Thermal Resistance (junction - lead)
ºC/W
255
Test Conditions:
V_S = 5 V
I_D = 11 mA Typ.
R_BIAS = 220 Ohms T_L = 25ºC
OIP₃ Tone Spacing = 1 MHz, Pout per tone = -12 dBm
Z_S = Z_L = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101495 Rev D