SDM-08120 Datasheet, PDF (1/5 Pages) SIRENZA MICRODEVICES – 869-894 MHz Class AB 130W Power Amplifier Module

Product Description
Sirenza Microdevices’ SDM-08120 130W power module is a robust
impedance matched, single-stage, push-pull Class AB amplifier mod-
ule suitable for use as a power amplifier driver or output stage. The
power transistors are fabricated using Sirenza's latest, high perfor-
mance LDMOS process. It is a drop-in, no-tune solution for high power
applications requiring high efficiency, excellent linearity, and unit-to-
unit repeatability. It is internally matched to 50 ohms.
Functional Block Diagram
SDM-08120
SDM-08120Y
Pb RoHS Compliant
& Green Package
869-894 MHz Class AB
130W Power Amplifier Module
Vgs
1
+3V DC to +6 V DC
+28V DC
Vds₁
Gnd
RF_in
180^o
Balun
o
0
Balun
Gnd
o
0
o
180
Vgs
2
+3V DC to +6 V DC
+28V DC
Case Flange = Ground
Key Specifications
Gnd _{Product Features}
• Available in RoHS compliant packaging
• ^RFout
50 W RF impedance
• 130W Output P_1dB
• Gnd
Single Supply Operation : Nominally 28V
• High Gain: 16 dB at 880 MHz
• _{Vds 2}
High Efficiency: 42% at 880 MHz
Applications
• Base Station PA driver
• Repeater
• CDMA / GSM / EDGE
Symbol
Parameter
Units Min. Typ.
Frequency
Frequency of Operation
MHz 869
-
P_1dB
Gain
Output Power at 1dB Compression, 881 MHz
Gain at 12W CDMA Output (Single Carrier IS-95), 881MHz
W
120 130
dB
14
16
Gain Flatness
Peak-to-Peak Gain Variation, 869 - 894MHz, 12 Watt
dB
-
0.5
Efficiency
Drain Efficiency at 120 Watts Output Power, CW 880 MHz
%
42
Efficiency
Drain Efficiency at 24 Watts Output Power, 869 - 894MHz
%
20
IRL
Input Return Loss 24W CW Output Power, 869 - 894MHz
dB
-
-15
CDMA ACPR
Integrated Bandwidth
IS-95, 9 Ch Fwd, Offset=750KHz, 881MHz, Pout=12W avg
IS-95, 9 Ch Fwd, Offset=1.98MHz, 881MHz, Pout=12W avg
IS-95, 9 Ch Fwd, Offset=750kHz, 881MHz, Pout=24W avg
dBc
-
-55
dBc
-63
dBc
-
-46
IMD
3rd Order IMD Product,120W PEP, 880MHz and 881MHz
dBc
-
-34
Delay
Signal Delay from Pin 3 to Pin 8
nS
-
4.0
Phase Linearity
Deviation from Linear Phase (Peak-to-Peak)
Deg
-
0.7
R_TH
Thermal Resistance (Junction-to-Case)
ºC/W
0.7
Test Conditions Z_in = Z_out = 50Ω, V_DD = 28.0V, I_DQ1 = I_DQ2 =600mA T_Flange = 25ºC
Max.
894
-
-
1.0
-12
-50
-60
-
-30
-
-
Quality Specifications
Parameter
Description
ESD Rating
MTTF
Human Body Model
200^oC Channel
Unit
Volts
Hours
Typical
2000
1.2 X 10⁶
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-103346 Rev F