SBW-5089_1 Datasheet, PDF (1/6 Pages) SIRENZA MICRODEVICES – Product Description InGaP/GaAs HBT MMIC Amplifier

SBW-5089
Product Description
The SBW-5089(Z) is a high performance InGaP/GaAs HBT MMIC
Amplifier. A Darlington circuit fabricated with InGaP process
technology provides broadband RF performance up to 8 GHz and
excellent thermal performance. The heterojunction increases
breakdown voltage and minimizes leakage current between junctions.
Cancellation of emitter junction non-linearities results in high
suppression of intermodulation products. Operation requires only a
single positive voltage supply, 2 DC-blocking capacitors, a bias resistor
and an RF choke.
The matte tin finish on Sirenza’s lead-free “Z” package is applied
using a post annealing process to mitigate tin whisker formation and
is RoHS compliant per EU Directive 2002/95. The package body is
manufactured with green molding compounds that contain no
antimony trioxide or halogenated fire retardants.
Gain & Return Loss vs. Frequency
I_D= 80 mA (Typ.) Tuned Application Circuit (fig.1)
25
0
20
-5
Gain
SBW-5089Z Pb RoHS Compliant
& Green Package
DC-8 GHz Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
• Available in Lead Free, RoHS Compliant
green package ( Z Suffix )
• 50 Ohm Cascadable Gain Block
• Wideband Flat Gain to 3 GHz: +/-1.4dB
• P1dB = 13.4 @ 6 GHz
• Input / Output VSWR < 2:3 to 8 GHz
• Patented Thermal Design
• Single Voltage Supply Operation
15
-10
ORL
10
-15
IRL
5
-20
0
-25
0
1
2
3
4
5
6
7
8
Frequency (GHz)
Applications
• Wideband Instrumentation
• Fiber Optic Driver
• OC-48
• Basestation
• SAT COM
Symbol
Parameter
G
Small Signal Gain
( PC board and connector losses de-embeded )
P_1dB
Output Power at 1dB Compression
OIP₃
Output Third Order Intercept Point
Pout
Output Power @ -45dBc ACP IS-95
9 Forward Channels
Bandwidth Determined by Return Loss (>10dB)
IRL
Worst case Input Return Loss
Units
dB
dBm
dBm
dBm
MHz
dB
Frequency
850 MHz
3000 MHz
4200 MHz
6000 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
1950MHz
DC-6000MHz
Min.
19.3
17.0
14.5
18.4
32.0
7
Typ.
20.3
18.0
17.2
15.5
20.1
19.4
35.5
34.0
13.0
6000
10
Max.
21.3
19.0
16.5
ORL
Worst case Output Return Loss
dB
DC-6000MHz
8
10
NF
Noise Figure
dB
1950 MHz
3.9
4.4
V_D
Device Operating Voltage
I_D
Device Operating Current
R_TH, j-l Thermal Resistance (junction to lead)
Test Conditions:
V_S = 8 V I_D = 80 mA Typ.
Bias Resistance = 39 Ohms
V
mA
°C/W
OIP₃ Tone Spacing = 1 MHz
Pout per tone = 0 dBm
4.5
4.9
5.3
72
80
88
70
T_L = 25ºC
Z_S = Z_L = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information
shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or
warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 South Technology Court
Broomfield, CO 80021
EDS-103325 Rev. C
1
Phone: (800) SMI-MMIC
http://www.sirenza.com