SBF-5089 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier

Product Description
Sirenza Microdevices’ SBF-5089 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 0.5 GHz
with excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-
linearities results in higher suppression of intermodulation
products. Only a single positive supply voltage, DC-blocking
capacitors, a bias resistor, and an optional RF choke are
required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and
is RoHS compliant per EU Directive 2002/95. This package is
also manufactured with green molding compounds that
contain no antimony trioxide nor halogenated fire retardants.
G ain & Return Loss Vs Frequency +25c
25
0
22 .5
20
S21
-5
S11
S22
-10
17 .5
-15
15
-20
12 .5
-25
10
-30
7 .5
-35
5
-40
0
100
200
300
400
500
600
700
800
900
F re q u e n c y(M Hz )
Symbol
Parameter
SBF-5089
SBF-5089Z
Pb RoHS Compliant
& Green Package
DC-500 MHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
• Available in Lead Free, RoHS compliant,
& Green packaging
• IP3 = 41dBm @ 240MHz
• Stable Gain Over Temperature
• Robust 1000V ESD, Class 1C
• Operates From Single Supply
• Low Thermal Resistance
Applications
• Receiver IF Applications
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite Terminals
Units Frequency Min. Typ. Max.
G
Small Signal Gain
70 MHz
20.5
dB
240 MHz
18.5 20.0 21.5
500 MHz
18.0 19.5 21.0
P_1dB
Output Power at 1dB Compression
dBm
70 MHz
240 MHz
400 MHz
19.2
21
21
20.7
OIP₃ Output Third Order Intercept Point
dBm
70 MHz
240 MHz
400 MHz
37.5
39.0
41.0
39.5
IRL Input Return Loss
dB
500 MHz
14
18
ORL Output Return Loss
dB
500 MHz
12
16
NF
Noise Figure
dB
500 MHz
2.8
3.8
V_D
Device Operating Voltage
V
4.5
4.9
5.3
I_D
Device Operating Current
mA
82
90
98
R_TH, j-l Thermal Resistance (junction to lead)
°C/W
43
Test Conditions:
V_S = 8 V
R_BIAS = 33 Ohms
I_D = 90 mA Typ.
T_L = 25ºC
OIP₃ Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z_S = Z_L = 50 Ohms, App circuit page 4
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright
2004 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-103413 Rev. C