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SBB-4089 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – 0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier
Product Description
Sirenza Microdevices’ SBB-4089 is a high performance InGaP HBT MMIC
amplifier utilizing a Darlington configuration with an active bias network.
The active bias network provides stable current over temperature and
process Beta variations. Designed to run directly from a 5V supply, the
SBB-4089 does not require a dropping resistor as compared to typical
Darlington amplifiers. The SBB-4089 product is designed for high linearity
5V gain block applications that require small size and minimal external
components. It is internally matched to 50 ohms.
SBB-4089
SBB-4089Z Pb RoHS Compliant
& Green Package
0.05-6 GHz, Cascadable
Active Bias InGaP/GaAs HBT MMIC Amplifier
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
Gain & Return Loss vs. Frequency (w/ BiasTees)
20
10
S21
0
-10
-20
S22
-30
S11
-40
0
1
2
3
4
5
6
Frequency (GHz)
Product Features
• Available in Lead Free, RoHS compliant, & Green packaging
• IP3 = 35.2 dBm @ 1950MHz
• P1dB = 19.3 dBm @ 1950MHz
• Single Fixed 5V Supply
• Robust 1000V ESD, Class 1C
• Patented Thermal Design & Patent Pending Bias Circuit
• Low Thermal Resistance
• MSL 1 moisture rating
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• Wideband Instrumentation
• Wireless Data, Satellite Terminals
Symbol
Parameter
Units
Frequency
Min.
Typ.
Max.
S21
Small Signal Gain
850MHz
14.0
15.0
17.0
dB
1950 MHz
14.0
15.5
17.0
2000 MHz
13.5
15.5
17.5
P1dB
Output Power at 1dB Compression
dBm
850MHz
1950 MHz
19.0
18
19.5
OIP3
Output Third Order Intercept Point
dBm
850MHz
1950 MHz
33.0
39.0
35.0
Bandwidth
S11
S22
S12
NF
S11, S22: Minimum 10dB Return Loss (typ.)
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
MHz
dB
dB
dB
dB
4500
1950 MHz
10.0
17.5
1950 MHz
10.0
17.5
1950 MHz
18.5
1950 MHz
4.5
5.5
VD
Device Operating Voltage
V
5
5.25
ID
Device Operating Current
mA
72
80
92
RTH, j-l Thermal Resistance (junction to lead)
Test Conditions:
VD = 5 V
TL = 25ºC
ID = 80 mA Typ.
ZS = ZL = 50 Ohms
°C/W
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Tested with Bias Tees
69.9
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-103832 Rev D