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SBA-5086 Datasheet, PDF (1/5 Pages) SIRENZA MICRODEVICES – DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
SBA-5086
SBA-5086Z Product Description
Sirenza Microdevices’ SBA-5086 is a high performance InGaP/
Pb RoHS Compliant
& Green Package
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A DC-5 GHz, Cascadable
Darlington configuration designed with InGaP process technology InGaP/GaAs HBT MMIC Amplifier
provides broadband performance up to 5 GHz with excellent
thermal perfomance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions.
Cancellation of emitter junction non-linearities results in higher
suppression of intermodulation products. Only a single positive
supply voltage, DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Product Features
The matte tin finish on Sirenza’s lead-free package utilizes a • Now available in Lead Free, RoHS
post annealing process to mitigate tin whisker formation and Compliant, & Green Packaging
is RoHS compliant per EU Directive 2002/95. This package is • IP3 = 34.0dBm @ 1950MHz
also manufactured with green molding compounds that con- • Pout=13.3dBm @-45dBc ACP IS-95 1950MHz
tain no antimony trioxide nor halogenated fire retardants.
Gain & Return Loss
• Robust 1000V ESD, Class 1C
25
20
15
S21
• Operates From Single Supply
• Patented Thermal Design
10
5
Applications
0
-5
• PA Driver Amplifier
-10
S11
-15
-20
S22
-25
-30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite Terminals
S ym bol
P a ra m e te r
U n its
F req u en cy
M in .
Ty p .
Max.
G
S m a ll S ig na l G a in
dB
850 MHz
1950 MHz
1 7 .5
1 5 .7
1 9 .0
1 7 .2
2 0 .5
1 8 .7
P 1dB
O utp ut P o w e r a t 1 d B C o m p re s s io n
dBm
850 MHz
1950 MHz
1 9 .5
18
1 9 .5
O IP 3
O u tp u t T h i rd O rd e r In te rc e p t P o i n t
dBm
850 MHz
1950 MHz
3 2 .0
3 6 .9
3 4 .0
P OUT
O u tp u t P o w e r @ -4 5 d B c A C P IS -9 5
9 F o rw a rd C ha nne ls
dBm
1950 MHz
1 3 .3
B a nd w id th D e te rm ine d b y R e turn L o s s (> 1 0 d B )
MHz
5000
IR L
In p u t R e tu rn L o s s
dB
1950 MHz
11 .0
1 3 .0
ORL
O utp ut R e turn L o s s
dB
1950 MHz
1 4 .0
1 9 .0
NF
N o ise F ig ure
dB
1950 MHz
4 .5
5 .5
VD
D e vic e O p e ra ting V o lta g e
V
4 .7
4 .9
5 .3
ID
D e vic e O p e ra ting C urre nt
mA
72
80
88
R TH , j-l T he rm a l R e s is ta nc e (junc tio n to le a d )
°C /W
102
Test Conditions:
VS = 8 V
RBIAS = 39 Ohms
ID = 80 mA Typ.
TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
Performance tests and ratings for Sirenza Microdevices’ products were performed internally by Sirenza and measured using specific computer systems and/or and components and reflect the approximate performance of the
products as measured by those tests. Any difference in circuit implementation, test software or test equipment may affect actual performance. The information provided herein is believed to be reliable at press time and Sirenza
Microdevices assumes no responsibility for the use of this information. All such use shall be entirely at the user’s own risk. Prices and specifications for Sirenza Microdevices’ products are subject to change without notice.
Buyers should consult Sirenza Microdevices’ standard terms and conditions of sale for Sirenza’s limited warranty with regard to its products. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any product for use in life-support devices and/or systems.
303 South Technology Ct., Broomfield,CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102742 Rev. D