S510065 Datasheet, PDF (1/7 Pages) SIRENZA MICRODEVICES – CATV OUT-OF- BAND- TUNER

S510065
CATV OUT-OF-BAND TUNER
FEATURES
• 3.3 V SINGLE SUPPLY OPERATION
• LOW POWER CONSUMPTION (400 mW)
• Low DISTORTION: -55dBc@ 1VPP
• 82 dB TOTAL CONVERSION GAIN
• 55 dB TOTAL GAIN CONTROL RANGE
• LOW LO-RF LEAKAGE
DESCRIPTION
The S510065-55Z is a downconverter designed to be used
as an Out-of-Band Tuner for use in CATV set-top box and
Digital Cable Ready TV applications. The S510065-55Z
consists of an input AGC amplifier, mixer, and a video/AGC
amplifier. This device offers optimum performance with low
power consumption and low distortion. There are two Pack-
age Options QFN 28 and TSSOP 20. The product is RoHS
Compliant
FUNCTIONAL DIAGRAM
EPCOS X6959M
SAW FILTER
VDD
28,18 27,17 26,19 25, X 24,15 23,14 22,13
1, X
2, 20
NC*
3, 1
NC*
4, X
5, X
6, 2
VDD
7, 6
MIXER
VIDEO
AMP
RF
AMP
LO
BUFFER
21,16
20,11
19,12
OUTPUT
MATCHING
VID OUT
18,10
17, 9
VDD
16, 8
15, 7
LO
APPLICATIONS
• Cable Set-Top Boxes • Digital Cable Ready TV Sets.
8, 3 9, 4 10, X 11, 5 12, X 13, X 14, X
RF
AGC
ELECTRICAL CHARACTERISTICS (TA = 25°C, VDD = 3.3 V, unless otherwise specified)
SYMBOLS PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
RF Performance
RFIN RF Input Frequency Range, High Side L.O.
MHz
50
150
LOIN LO Input Frequency Range, High Side L.O.
MHz
80
220
CGMAX Maximum Conversion Gain*
dB
82
VAGC AGC Voltage
V
0
3
AGC AGC Dynamic Range VAGC = 0 to 3 V
dB
50
55
IM3
Third Order Intermodulation, 1 VPP Differential Output, 1K ohm load
dBc
50
55
IFOUT IF Output Level, Differential Output, 1K ohm load
VPP
1
2
NF
Noise Figure, VAGC = 3 V
dB
13
15
GINPUT RF Amp/Mixer Conversion Gain, VAGC = 3 V
dB
41
GVIDEO Video Amplifer Gain, VAGC = 3 V
dB
55
LO-RF LO leakage at the RF port
LEAKAGE
dBm
-95
-85
DC Performance
VDD
Supply Voltage
IDD
Supply Current
* Includes saw filter loss.
V
3.2
3.3
3.4
mA
117
135
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDD (GND) Supply Voltage (GND)
V
-0.3 to +3.6
TOP
Operating Temperature
°C -40 to +85
TSTG
Storage Temperature
°C -65 to +150
Junction Temperature
°C
+150
Thermal Resistance (Ø ja) °C/W
34
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
Performance tests and ratings for Sirenza Microdevices’ products were performed internally by Sirenza and measured using specific computer systems and/or components and reflect the approximate performance of the products as measured by those tests. Any difference in circuit
implementation, test software, or test equipment may affect actual performance. The information provided herein is believed to be reliable at press time and Sirenza Microdevices assumes no responsibility for the use of this information. All such use shall be entirely at the user’s own risk.
Prices and specifications for Sirenza Microdevices’ products are subject to change without notice. Buyers should consult Sirenza Microdevices’ standard terms and conditions of sale for Sirenza’s limited warranty with regard to its products. No patent rights or licenses to any of the circuits
described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any product for use in life-support devices and/or systems.
303 S. Technology Court, Broomfield, CO 80021
303-327-3030
1
www.sirenza.com
REV. F
5/6/2005