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SII200N12 Datasheet, PDF (6/7 Pages) Sirectifier Semiconductors – NPT IGBT Modules
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SII200N12
NPT IGBT Modules
T yp. s witc hing time
I = f (IC) , inductive load , T j = 125°C
par.: VC E = 600 V , V G E = ± 15 V , R G = 4.7 Ω
10 4
T yp. s witc hing time
t = f (R G) , inductive load , Tj = 125°C
par.: VC E = 600 V , V G E = ± 15 V , IC = 200 A
10 4
ns
t
10 3
10 2
ns
tdoff
t
10 3
tdoff
tdon
tr
tdon
tr
10 2
tf
tf
10 1
0
100
200
300
A
500
IC
T yp. s witc hing los s es
E = f (IC) , inductive load , Tj = 125°C
par.: VC E = 600 V , V G E = ± 15 V , R G = 4.7 Ω
100
mWs
E on
E
80
70
60
50
E off
40
30
20
10
0
0
100
200
300
A
500
IC
10 1
0
10
20
30
40
Ω
60
RG
T yp. s witc hing los s es
E = f (R G ) , inductive load , T j = 125°C
par.: VC E = 600V , V G E = ± 15 V , IC = 200 A
100
E on
mWs
E
80
70
60
50
E off
40
30
20
10
0
0
10
20
30
40
Ω
60
RG
SirectifierR
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