STD90GKXXB Datasheet, PDF (4/4 Pages) Sirectifier Semiconductors – Thyristor-Diode Modules

STD90GKXXB
Thyristor-Diode Modules
750
W
3
3
.._SSDTDT9900BB
w3
500
B6
250
Pvtot
0
0 ID IRMS 50
100
150
200 A 250
Fig.4L Power dissipation of three modules vs. direct and rms current
750
W
0.1 0.08 0.06
0.12
0.04 0.02
Rth(c-a)
0.14
0.17
500
0.2
0.25
0.3
0.35
250 ^0.4
0.5
0.6
K/W
Pvtot
0
0 ^Ta
50
100
O_C
Fig.4R Power dissipation of three modules vs. case temp
76
Tc
86
96
106
115
O_C
125
150
1000
uC
11//22._{.SSDTTD9900BB}
100
500A
200A
100A
50A
20A
ITM=
0.6
K/W
0.5
1/2
1/2
..
STD90B
SDT90B
0.4
0.3
0.2
Zth(j-s)
Zth(j-c)
Qrr
10
1 -diT/dt
10
Fig.5 Recovered charge vs. current decrease
Tvj=125^oC
A/us 100
400
. _A 11//22_{.SSDTTD9900BB}
typ.
max.
300
200
100
IT
0
0 Vt 0.5
Fig.7 On-state charactristics
_ _Tvj=25 ^O_C
Tvj=125 ^OC
1
1.5
2 V 2.5
0.1
Zth
0
0.001 _t 0.01 0.1
1
Fig.6 Transient thermal impedance vs. time
10 s 100
2
IT(OV)
ITSM
1.6
1/2
1/2
.._SSD^TDT9900BB
1.4
1.2
1
0.8
0.6
0.4
1t
10
Fig.8 Surge overload current vs. time
ITSM(25 ^OC) =1600A
ITSM(125 ^OC)=1450A
._{0 VRRM}
. 0.5 VRRM
.1 VRRM
100
ms 1000
P4
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