STD70GK08B Datasheet, PDF (4/4 Pages) Sirectifier Semiconductors – Thyristor-Diode Modules

STD70GKXXB
Thyristor-Diode Modules
250
200
150
100
Conduction Angle
50
180°
120°
90°
60°
30°
0.2
0⁰_.^.₅⁴⁰_K^.K3_/^/K_W^{W/ W}
K/
W
0.7 _{K/ W}
1 _{K/ W}
1.5 _{K/ W}
STD70B/SDT70B..Series
Per Module
3 K/ _W
T _J = 125°C
0
0 20 40 60 80 100 120 140 160 180
0 20 40 60 80 100 120 140
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-state Power Loss Characteristics
600
500
400
300
200
100
0
0
180°
(Sine)
180°
(Rect)
R
thSA
= _0.1
K/ _W
0.2 _{K/ W}
0.3 _{K/ W}
- _{De lta R}
0.5 _{K/ W}
2 x STD70B/SDTT70B..Series
Single Phase Bridge
1 _{K/ W}
Connected
2 K/ _W
T _J = 125°C
20 40 60 80 100 120 140 160 180
0 20 40 60 80
100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-state Power Loss Characteristics
800
700
600
500
400
300
200
100
0
0
120°
(Rect)
R_thSA
0.2 _{K/ W}
0.3 _{K/ W}
= _{0.1 K/ W}
- _{Delta R}
3 x STD70B/SDT70B..Series^{0.5 K/} W
Three Phase Bridge
Connected
1 _{K/ W}
T _J = 125°C
40
80 120 160 200 240
0 20 40 60 80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-state Power Loss Characteristics
P4
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