BTB08 Datasheet, PDF (4/5 Pages) STMicroelectronics – 8A TRIACS

BTB/BTA08
Discrete Triacs(Non-Isolated/Isolated)
F ig. : 6Non-repetitive s urge peak on-s tate
current for a s inus oida l puls e with width
tp < 10ms, a nd corres ponding value of I²t.
F ig. 7: R elative va riation of gate trigger current,
holding current and la tching current versus
junction temperature (typical va lues ).
IT S M (A ),I²t (A ²s )
1000
T j initial=25°C
100
dI/dt limitation:
50A /µs
10
0.01
tp (ms )
0.10
1.00
ITS M
I²t
10.00
IG T,IH,IL [T j] / IG,TIH,IL [T j=25°C ]
2.5
2.0
IG T
1.5
IH & IL
1.0
0.5
Tj(°C )
0.0
-40 -20 0 20 40 60 80 100 120 140
F ig. -82: R elative variation of critical rate of
decreas e of main current vers us (dV /dt)c (typical
values ). S tandard Types
F ig. : 9 R elative varia tion of critical rate of
decreas e of main current vers us junction
te mpe ra ture.
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
2.0
1.8
1.6
C
1.4 ^B
1.2
1.0
0.8
0.6
(dV /dt)c (V /µs )
0.4
0.1
1.0
10.0
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
6
5
4
3
2
1
0
100.0
0
Tj(°C )
25
50
75
100
125
F ig. 01: DPAK and D²PAK T hermal resis tance
junction to ambient vers us copper s urface under
tab (printed circuit board F R 4, copper thicknes s :
35 ∝m).
R th(j-a) (°C /W)
100
90
80
70
60
50
DPAK
40
30
D²PAK
20
10
S (c m²)
0
0 4 8 12 16 20 24 28 32 36 40