SUR3080PT_16 Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes

SUR3080PT thru SUR30120PT
Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes
30
A
25
I_F ²⁰
15
10
T_VJ=25°C
T_VJ=100°C
T_VJ=150°C
5
0
0
1
2
3V 4
V_F
Fig. 1 Forward current
versus voltage drop.
3.0
µC
T_VJ=100°C
V_R= 540V
2.5
2.0
Q_r
1.5
I_F=11A
I_F=22A
I_F=11A
I_F=5.5A
30
A
T_VJ=100°C
V_R=540V
25
I_RM
20
15
I_F=11A
I_F=22A
I_F=11A
I_F=5.5A
max.
1.0
max.
0.5
typ.
0.0
1
10
100 A/µs 1000
-di_F/dt
Fig. 2 Recovery charge versus -di_F/dt.
10
typ.
5
0
0
100 200 3A0/0µs 400
-di_F/dt
Fig. 3 Peak reverse current versus
-di_F/dt.
1.4
1.2
1.0
K_f
I_RM
0.8
0.6
Q_R
0.4
0.2
0.0
0
40
80
T_J
120 °C 160
Fig. 4 Dynamic parameters versus
junction temperature.
1.0
µs
0.8
t_{rr 0.6}
0.4
max.
T_VJ=100°C
V_R=540V
I_F=11A
I_F=22A
I_F=11A
I_F=5.5A
0.2
typ.
0.0
0
100 200
-di_F/dt
300 A/µs400
Fig. 5 Recovery time versus -di_F/dt.
60
V
50
V_FR⁴⁰
30
20
V_FR
t_fr
1200
ns
1000
800
t_fr
600
400
10
200
T_VJ=125°C
0
I_F=11A
0
0
100 200 300 A/µs 400
di_F/dt
Fig. 6 Peak forward voltage
versus di_F/dt.
Fig. 7 Transient thermal impedance junction to case.
P3
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