SUR2X60-02_16 Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes

SUR2x60-02
Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes
160
A
140
I_F ¹²⁰
100
80
T_VJ=150°C
60
T_VJ=100°C
40
20
T_VJ=25°C
0
0.0
0.4
0.8
1.2 V
V_F
Fig. 1 Forward current I_F versus V_F
1.6
1.4
K_f
1.2
1.0
0.8
I_RM
0.6
0.4
Q_r
0.2
0
40
80 120 °C 160
T_VJ
Fig. 4 Dynamic parameters Q_r, I_RM
versus T_VJ
0.8
T_VJ= 100°C
ˇ C ^{VR = 100V}
Q_r
0.6
0.4
I_F= 35A
I_F= 70A
I_F=140A
0.2
30
A
25
I_RM
T_VJ= 100°C
V_R = 100V
20
I_F= 35A
15 ^IF^{= 70A}
I_F=140A
10
5
0.0
10
100
A/us 1000
-di_F/dt
Fig. 2 Typ. reverse recovery charge Q_r
versus -di_F/dt
0
0 200 400 600 A8/0u0s 1000
-di_F/dt
Fig. 3 Typ. peak reverse current I_RM
versus -di_F/dt
70
ns
60
t_{rr 50}
40
30
20
10
T_VJ= 100°C
V_R = 100V
I_F=35A
I_F=70A
I_F=140A
5
V
V_FR ⁴
t_fr
3
2
1
T_VJ= 100°C
I_F = 100A
V_FR
2.5
us
2.0
t_fr
1.5
1.0
0.5
0
0 200 400 600 A/us
-di_F/dt
Fig. 5 Typ. recovery time t_rr
versus -di_F/dt
1000
0
0.0
0
200 400 600 A8/u0s0
di_F/dt
Fig. 6 Typ. peak forward voltage V_FR
and t_fr versus di_F/dt
1
K/W
Z_thJC
0.1
Constants for
Z_thJC calculation:
R_thi / (K/W) t_i / (s)
0.1000 0.00014
0.3400 0.00600
0.3600 0.16500
0.01
0.0001
0.001
0.01
0.1
1
s 10
t
Fig. 7 Transient thermal impedance junction to case
P3
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